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Mishra S, Przezdziecka E, Wozniak W, et al. Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters. Materials (Basel). 2021;14(14)doi: 10.3390/ma14144048.
Mishra, S., Przezdziecka, E., Wozniak, W., Adhikari, A., Jakiela, R., Paszkowicz, W., Sulich, A., Ozga, M., Kopalko, K., & Guziewicz, E. (2021). Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters. Materials (Basel, Switzerland), 14(14), . https://doi.org/10.3390/ma14144048
Mishra, Sushma, et al. "Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters." Materials (Basel, Switzerland) vol. 14,14 (2021). doi: https://doi.org/10.3390/ma14144048
Mishra S, Przezdziecka E, Wozniak W, Adhikari A, Jakiela R, Paszkowicz W, Sulich A, Ozga M, Kopalko K, Guziewicz E. Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters. Materials (Basel). 2021 Jul 20;14(14). doi: 10.3390/ma14144048. PMID: 34300967; PMCID: PMC8307850.
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Materials (Basel). 2021 Jul 20;14(14). doi: 10.3390/ma14144048.

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

Materials (Basel, Switzerland)

Sushma Mishra, Ewa Przezdziecka, Wojciech Wozniak, Abinash Adhikari, Rafal Jakiela, Wojciech Paszkowicz, Adrian Sulich, Monika Ozga, Krzysztof Kopalko, Elzbieta Guziewicz

Affiliations

  1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland.

PMID: 34300967 PMCID: PMC8307850 DOI: 10.3390/ma14144048

Abstract

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T

Keywords: atomic layer deposition; defect engineering; dislocation density; electrical properties; strain; zinc oxide

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