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Parkhomenko RG, De Luca O, Kołodziejczyk Ł, et al. Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine. Dalton Trans. 2021;50(42):15062-15070doi: 10.1039/d1dt02529e.
Parkhomenko, R. G., De Luca, O., Kołodziejczyk, �. �., Modin, E., Rudolf, P., Martínez Martínez, D., Cunha, L., & Knez, M. (2021). Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine. Dalton transactions (Cambridge, England : 2003), 50(42), 15062-15070. https://doi.org/10.1039/d1dt02529e
Parkhomenko, Roman G, et al. "Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine." Dalton transactions (Cambridge, England : 2003) vol. 50,42 (2021): 15062-15070. doi: https://doi.org/10.1039/d1dt02529e
Parkhomenko RG, De Luca O, Kołodziejczyk Ł, Modin E, Rudolf P, Martínez Martínez D, Cunha L, Knez M. Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine. Dalton Trans. 2021 Nov 02;50(42):15062-15070. doi: 10.1039/d1dt02529e. PMID: 34610072.
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Dalton Trans. 2021 Nov 02;50(42):15062-15070. doi: 10.1039/d1dt02529e.

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine.

Dalton transactions (Cambridge, England : 2003)

Roman G Parkhomenko, Oreste De Luca, Łukasz Kołodziejczyk, Evgeny Modin, Petra Rudolf, Diego Martínez Martínez, Luis Cunha, Mato Knez

Affiliations

  1. CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain. [email protected].
  2. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
  3. Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz, Poland.
  4. Physics Center of Minho and Porto Universities-CF-UM-UP, School of Sciences, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal.
  5. IKERBASQUE, Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao, Spain.

PMID: 34610072 DOI: 10.1039/d1dt02529e

Abstract

The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375-475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.

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