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Jang W, Han S, Gu T, et al. hBN Flake Embedded Al. Materials (Basel). 2021;14(23)doi: 10.3390/ma14237373.
Jang, W., Han, S., Gu, T., Chae, H., & Whang, D. (2021). hBN Flake Embedded Al. Materials (Basel, Switzerland), 14(23), . https://doi.org/10.3390/ma14237373
Jang, Wonseok, et al. "hBN Flake Embedded Al." Materials (Basel, Switzerland) vol. 14,23 (2021). doi: https://doi.org/10.3390/ma14237373
Jang W, Han S, Gu T, Chae H, Whang D. hBN Flake Embedded Al. Materials (Basel). 2021 Dec 01;14(23). doi: 10.3390/ma14237373. PMID: 34885529; PMCID: PMC8658176.
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Materials (Basel). 2021 Dec 01;14(23). doi: 10.3390/ma14237373.

hBN Flake Embedded Al.

Materials (Basel, Switzerland)

Wonseok Jang, Seunghun Han, Taejun Gu, Heeyeop Chae, Dongmok Whang

Affiliations

  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si 16419, Korea.
  2. School of Chemical Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si 16419, Korea.
  3. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si 16419, Korea.

PMID: 34885529 PMCID: PMC8658176 DOI: 10.3390/ma14237373

Abstract

Due to the vulnerability of organic optoelectronic devices to moisture and oxygen, thin-film moisture barriers have played a critical role in improving the lifetime of the devices. Here, we propose a hexagonal boron nitride (hBN) embedded Al

Keywords: exfoliation; flexible moisture barrier; hexagonal boron nitride; plasma enhanced atomic layer deposition; point defect

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