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Song SJ, Park T, Yoon KJ, et al. Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N. ACS Appl Mater Interfaces. 2016;9(1):537-547doi: 10.1021/acsami.6b11613.
Song, S. J., Park, T., Yoon, K. J., Yoon, J. H., Kwon, D. E., Noh, W., Lansalot-Matras, C., Gatineau, S., Lee, H. K., Gautam, S., Cho, D. Y., Lee, S. W., & Hwang, C. S. (2017). Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N. ACS applied materials & interfaces, 9(1), 537-547. https://doi.org/10.1021/acsami.6b11613
Song, Seul Ji, et al. "Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N." ACS applied materials & interfaces vol. 9,1 (2017): 537-547. doi: https://doi.org/10.1021/acsami.6b11613
Song SJ, Park T, Yoon KJ, Yoon JH, Kwon DE, Noh W, Lansalot-Matras C, Gatineau S, Lee HK, Gautam S, Cho DY, Lee SW, Hwang CS. Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N. ACS Appl Mater Interfaces. 2017 Jan 11;9(1):537-547. doi: 10.1021/acsami.6b11613. Epub 2016 Dec 20. PMID: 27936581.
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ACS Appl Mater Interfaces. 2017 Jan 11;9(1):537-547. doi: 10.1021/acsami.6b11613. Epub 2016 Dec 20.

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N.

ACS applied materials & interfaces

Seul Ji Song, Taehyung Park, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Wontae Noh, Clement Lansalot-Matras, Satoko Gatineau, Han-Koo Lee, Sanjeev Gautam, Deok-Yong Cho, Sang Woon Lee, Cheol Seong Hwang

Affiliations

  1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , Seoul 151-744, Korea.
  2. Air Liquide Laboratories Korea, Suite 176, Yonsei Engineering Research Park, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
  3. Pohang Accelerator Laboratory, Pohang 37673, Korea.
  4. Dr. S.S.Bhatnagar University Institute of Chemical Engineering and Technology, Panjab University , Chandigarh 160 014, India.
  5. Department of Physics, Chonbuk National University , Jeonju 54896, Korea.
  6. Department of Physics and Division of Energy Systems Research, Ajou University , Suwon 16499, Korea.

PMID: 27936581 DOI: 10.1021/acsami.6b11613

Abstract

The growth characteristics of Ta

Keywords: Ta(NtBu)(NEt2)2Cp (TBDETCp); Ta(NtBu)(NEt2)3 (TBTDET); Ta2O5; atomic layer deposition (ALD); resistive switching

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