U.S.-China Cooperative Research: Novel Silicon-On-Insulator using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers.

[No authors listed]

UIID-NSF: 557

Abstract

0004547 Shen This is a three-year cooperative project between Dr. Dashan Shen, the University of Alabama and Professor Yu Yuehui, the Shanghai Institute of Metallurgy, Chinese Academy Science, to study novel Silicon-On-Insulator substrates using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers. This project will experiment using Amorphous Aluminum Nitride and Amorphous Diamond as an insulating layer on Silicon-on-insulator substrates to improve the thermal conductivity of integrated circuits (IC). This is important research in high power IC applications. Success in developing this technology can overcome the self-heating effect of the circuit due to the poor thermal conductivity and heat diffusion of the insulating layer. This proposal also provides an opportunity for a U.S. graduate student from an EPSCoR institute to work with one of the best Chinese research institutes in metallurgy. This proposal addresses an important scientific question and meets the NSF objective of human resource development. The Chinese Academy of Science and the NSF jointly support this project.

Other Details

• Award Instrument: Standard Grant
• Email: [email protected]
• Organization: University of Alabama in Huntsville
• Other Investigators: Jeffrey Peterson, Joseph Aistrup, Laszlo Kulcsar
• Primary Investigator: Dashen Shen
• Program(s): EAST ASIA AND PACIFIC PROGRAM, EXP PROG TO STIM COMP RES
• Start Date: 05/01/2001