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Amer NM, Dersch H, Skumanich A. Influence of dangling-bond defects on recombination in a-Si:H. Phys Rev B Condens Matter. 1985;31(10):6913-6916doi: 10.1103/physrevb.31.6913.
Amer, N. M., Dersch, H., & Skumanich, A. (1985). Influence of dangling-bond defects on recombination in a-Si:H. Physical review. B, Condensed matter, 31(10), 6913-6916. https://doi.org/10.1103/physrevb.31.6913
Amer, et al. "Influence of dangling-bond defects on recombination in a-Si:H." Physical review. B, Condensed matter vol. 31,10 (1985): 6913-6916. doi: https://doi.org/10.1103/physrevb.31.6913
Amer NM, Dersch H, Skumanich A. Influence of dangling-bond defects on recombination in a-Si:H. Phys Rev B Condens Matter. 1985 May 15;31(10):6913-6916. doi: 10.1103/physrevb.31.6913. PMID: 9935605.
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