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Corbett JW, Hallén A, Mohadjeri B, et al. Divacancy acceptor levels in ion-irradiated silicon. Phys Rev B Condens Matter. 1991;43(3):2292-2298doi: 10.1103/physrevb.43.2292.
Corbett, J. W., Hallén, A., Mohadjeri, B., Svensson, B. G., & Svensson, J. H. (1991). Divacancy acceptor levels in ion-irradiated silicon. Physical review. B, Condensed matter, 43(3), 2292-2298. https://doi.org/10.1103/physrevb.43.2292
Corbett, et al. "Divacancy acceptor levels in ion-irradiated silicon." Physical review. B, Condensed matter vol. 43,3 (1991): 2292-2298. doi: https://doi.org/10.1103/physrevb.43.2292
Corbett JW, Hallén A, Mohadjeri B, Svensson BG, Svensson JH. Divacancy acceptor levels in ion-irradiated silicon. Phys Rev B Condens Matter. 1991 Jan 15;43(3):2292-2298. doi: 10.1103/physrevb.43.2292. PMID: 9997504.
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