Cite
Corbel C, Hautojärvi P, Keinonen J, et al. Defect structure and recovery in hydrogen-implanted semi-insulating GaAs. Phys Rev B Condens Matter. 1991;43(5):4249-4262doi: 10.1103/physrevb.43.4249.
Corbel, C., Hautojärvi, P., Keinonen, J., Räisänen, J., Rauhala, E., & Saarinen, K. (1991). Defect structure and recovery in hydrogen-implanted semi-insulating GaAs. Physical review. B, Condensed matter, 43(5), 4249-4262. https://doi.org/10.1103/physrevb.43.4249
Corbel, et al. "Defect structure and recovery in hydrogen-implanted semi-insulating GaAs." Physical review. B, Condensed matter vol. 43,5 (1991): 4249-4262. doi: https://doi.org/10.1103/physrevb.43.4249
Corbel C, Hautojärvi P, Keinonen J, Räisänen J, Rauhala E, Saarinen K. Defect structure and recovery in hydrogen-implanted semi-insulating GaAs. Phys Rev B Condens Matter. 1991 Feb 15;43(5):4249-4262. doi: 10.1103/physrevb.43.4249. PMID: 9997776.
Copy
Download .nbib