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Heiser T, Mesli A. Defect reactions in copper-diffused and quenched p-type silicon. Phys Rev B Condens Matter. 1992;45(20):11632-11641doi: 10.1103/physrevb.45.11632.
Heiser, T., & Mesli, A. (1992). Defect reactions in copper-diffused and quenched p-type silicon. Physical review. B, Condensed matter, 45(20), 11632-11641. https://doi.org/10.1103/physrevb.45.11632
Heiser, and Mesli. "Defect reactions in copper-diffused and quenched p-type silicon." Physical review. B, Condensed matter vol. 45,20 (1992): 11632-11641. doi: https://doi.org/10.1103/physrevb.45.11632
Heiser T, Mesli A. Defect reactions in copper-diffused and quenched p-type silicon. Phys Rev B Condens Matter. 1992 May 15;45(20):11632-11641. doi: 10.1103/physrevb.45.11632. PMID: 10001177.
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American Physical Society

Phys Rev B Condens Matter. 1992 May 15;45(20):11632-11641. doi: 10.1103/physrevb.45.11632.

Defect reactions in copper-diffused and quenched p-type silicon.

Physical review. B, Condensed matter

Heiser, Mesli

PMID: 10001177 DOI: 10.1103/physrevb.45.11632

[No abstract available.]

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