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Andriamonje S, Anne R, Chevallier M, et al. Electron-impact ionization and energy loss of 27-MeV/u Xe35+ incident ions channeled in silicon. Phys Rev Lett. 1989;63(18):1930-1933doi: 10.1103/PhysRevLett.63.1930.
Andriamonje, S., Anne, R., Chevallier, M., Cohen, C., de Castro Faria NV, Dural, J., Farizon-Mazuy, B., Gaillard, M. J., Genre, R., Hage-Ali, M., Kirsch, R., L'Hoir, A., Mory, J., Moulin, J., Poizat, J. C., Quéré, Y., Remillieux, J., Schmaus, D., & Toulemonde, M. (1989). Electron-impact ionization and energy loss of 27-MeV/u Xe35+ incident ions channeled in silicon. Physical review letters, 63(18), 1930-1933. https://doi.org/10.1103/PhysRevLett.63.1930
Andriamonje, et al. "Electron-impact ionization and energy loss of 27-MeV/u Xe35+ incident ions channeled in silicon." Physical review letters vol. 63,18 (1989): 1930-1933. doi: https://doi.org/10.1103/PhysRevLett.63.1930
Andriamonje S, Anne R, Chevallier M, Cohen C, de Castro Faria NV, Dural J, Farizon-Mazuy B, Gaillard MJ, Genre R, Hage-Ali M, Kirsch R, L'Hoir A, Mory J, Moulin J, Poizat JC, Quéré Y, Remillieux J, Schmaus D, Toulemonde M. Electron-impact ionization and energy loss of 27-MeV/u Xe35+ incident ions channeled in silicon. Phys Rev Lett. 1989 Oct 30;63(18):1930-1933. doi: 10.1103/PhysRevLett.63.1930. PMID: 10040717.
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