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Laitinen P, Strohm A, Huikari J, et al. Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers. Phys Rev Lett. 2002;89(8):085902doi: 10.1103/PhysRevLett.89.085902.
Laitinen, P., Strohm, A., Huikari, J., Nieminen, A., Voss, T., Grodon, C., Riihimäki, I., Kummer, M., Aystö, J., Dendooven, P., Räisänen, J., & Frank, W. (2002). Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers. Physical review letters, 89(8), 085902. https://doi.org/10.1103/PhysRevLett.89.085902
Laitinen, P, et al. "Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers." Physical review letters vol. 89,8 (2002): 085902. doi: https://doi.org/10.1103/PhysRevLett.89.085902
Laitinen P, Strohm A, Huikari J, Nieminen A, Voss T, Grodon C, Riihimäki I, Kummer M, Aystö J, Dendooven P, Räisänen J, Frank W. Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers. Phys Rev Lett. 2002 Aug 19;89(8):085902. doi: 10.1103/PhysRevLett.89.085902. Epub 2002 Aug 05. PMID: 12190483.
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