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Bell MI, Bouldin CE, Cross JO, et al. Conservation of bond lengths in strained Ge-Si layers. Phys Rev B Condens Matter. 1991;43(3):2419-2422doi: 10.1103/physrevb.43.2419.
Bell, M. I., Bouldin, C. E., Cross, J. O., Gibbons, J. F., Hoyt, J. L., King, C. A., Pianetta, P., Sorensen, L. B., Swanson, B. D., Tweet, D. J., Woicik, J. C., & Zhang, T. M. (1991). Conservation of bond lengths in strained Ge-Si layers. Physical review. B, Condensed matter, 43(3), 2419-2422. https://doi.org/10.1103/physrevb.43.2419
Bell, et al. "Conservation of bond lengths in strained Ge-Si layers." Physical review. B, Condensed matter vol. 43,3 (1991): 2419-2422. doi: https://doi.org/10.1103/physrevb.43.2419
Bell MI, Bouldin CE, Cross JO, Gibbons JF, Hoyt JL, King CA, Pianetta P, Sorensen LB, Swanson BD, Tweet DJ, Woicik JC, Zhang TM. Conservation of bond lengths in strained Ge-Si layers. Phys Rev B Condens Matter. 1991 Jan 15;43(3):2419-2422. doi: 10.1103/physrevb.43.2419. PMID: 9997524.
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