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High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb).

Beilstein journal of nanotechnology

Oveshnikov LN, Nekhaeva EI, Kochura AV, Davydov AB, Shakhov MA, Marenkin SF, Novodvorskii OA, Kuzmenko AP, Vasiliev AL, Aronzon BA, Lahderanta E.
PMID: 30254840
Beilstein J Nanotechnol. 2018 Sep 14;9:2457-2465. doi: 10.3762/bjnano.9.230. eCollection 2018.

We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition using the eutectic compound (GaSb)

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Oveshnikov LN, Nekhaeva EI, Kochura AV, et al. High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb). Beilstein J Nanotechnol. 2018;9:2457-2465doi: 10.3762/bjnano.9.230.
Oveshnikov, L. N., Nekhaeva, E. I., Kochura, A. V., Davydov, A. B., Shakhov, M. A., Marenkin, S. F., Novodvorskii, O. A., Kuzmenko, A. P., Vasiliev, A. L., Aronzon, B. A., & Lahderanta, E. (2018). High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb). Beilstein journal of nanotechnology, 92457-2465. https://doi.org/10.3762/bjnano.9.230
Oveshnikov, Leonid N, et al. "High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)." Beilstein journal of nanotechnology vol. 9 (2018): 2457-2465. doi: https://doi.org/10.3762/bjnano.9.230
Oveshnikov LN, Nekhaeva EI, Kochura AV, Davydov AB, Shakhov MA, Marenkin SF, Novodvorskii OA, Kuzmenko AP, Vasiliev AL, Aronzon BA, Lahderanta E. High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb). Beilstein J Nanotechnol. 2018 Sep 14;9:2457-2465. doi: 10.3762/bjnano.9.230. eCollection 2018. PMID: 30254840; PMCID: PMC6142748.
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Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres.

Scientific reports

Choi S, Leong V, Davydov VA, Agafonov VN, Cheong MWO, Kalashnikov DA, Krivitsky LA.
PMID: 29491410
Sci Rep. 2018 Feb 28;8(1):3792. doi: 10.1038/s41598-018-21953-2.

Nanodidamonds containing colour centres open up many applications in quantum information processing, metrology, and quantum sensing. However, controlling the synthesis of nanodiamonds containing silicon vacancy (SiV) centres is still not well understood. Here we study nanodiamonds produced by a...

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Choi S, Leong V, Davydov VA, et al. Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres. Sci Rep. 2018;8(1):3792doi: 10.1038/s41598-018-21953-2.
Choi, S., Leong, V., Davydov, V. A., Agafonov, V. N., Cheong, M. W. O., Kalashnikov, D. A., & Krivitsky, L. A. (2018). Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres. Scientific reports, 8(1), 3792. https://doi.org/10.1038/s41598-018-21953-2
Choi, Sumin, et al. "Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres." Scientific reports vol. 8,1 (2018): 3792. doi: https://doi.org/10.1038/s41598-018-21953-2
Choi S, Leong V, Davydov VA, Agafonov VN, Cheong MWO, Kalashnikov DA, Krivitsky LA. Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres. Sci Rep. 2018 Feb 28;8(1):3792. doi: 10.1038/s41598-018-21953-2. PMID: 29491410; PMCID: PMC5830582.
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Probing the Optical Properties and Strain-Tuning of Ultrathin Mo.

Nano letters

Aslan OB, Datye IM, Mleczko MJ, Sze Cheung K, Krylyuk S, Bruma A, Kalish I, Davydov AV, Pop E, Heinz TF.
PMID: 29561623
Nano Lett. 2018 Apr 11;18(4):2485-2491. doi: 10.1021/acs.nanolett.8b00049. Epub 2018 Mar 29.

Ultrathin transition metal dichalcogenides (TMDCs) have recently been extensively investigated to understand their electronic and optical properties. Here we study ultrathin Mo

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Aslan OB, Datye IM, Mleczko MJ, et al. Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano Lett. 2018;18(4):2485-2491doi: 10.1021/acs.nanolett.8b00049.
Aslan, O. B., Datye, I. M., Mleczko, M. J., Sze Cheung, K., Krylyuk, S., Bruma, A., Kalish, I., Davydov, A. V., Pop, E., & Heinz, T. F. (2018). Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano letters, 18(4), 2485-2491. https://doi.org/10.1021/acs.nanolett.8b00049
Aslan, Ozgur Burak, et al. "Probing the Optical Properties and Strain-Tuning of Ultrathin Mo." Nano letters vol. 18,4 (2018): 2485-2491. doi: https://doi.org/10.1021/acs.nanolett.8b00049
Aslan OB, Datye IM, Mleczko MJ, Sze Cheung K, Krylyuk S, Bruma A, Kalish I, Davydov AV, Pop E, Heinz TF. Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano Lett. 2018 Apr 11;18(4):2485-2491. doi: 10.1021/acs.nanolett.8b00049. Epub 2018 Mar 29. PMID: 29561623; PMCID: PMC7243468.
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Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

ACS nano

Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GR, Eichfeld SM, Burke RA, Shah PB, O'Regan TP, Crowne FJ, Birdwell AG, Robinson JA, Davydov AV, Ivanov TG.
PMID: 26866442
ACS Nano. 2016 Mar 22;10(3):3580-8. doi: 10.1021/acsnano.5b08008. Epub 2016 Feb 19.

When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2...

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Ruzmetov D, Zhang K, Stan G, et al. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. ACS Nano. 2016;10(3):3580-8doi: 10.1021/acsnano.5b08008.
Ruzmetov, D., Zhang, K., Stan, G., Kalanyan, B., Bhimanapati, G. R., Eichfeld, S. M., Burke, R. A., Shah, P. B., O'Regan, T. P., Crowne, F. J., Birdwell, A. G., Robinson, J. A., Davydov, A. V., & Ivanov, T. G. (2016). Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. ACS nano, 10(3), 3580-8. https://doi.org/10.1021/acsnano.5b08008
Ruzmetov, Dmitry, et al. "Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride." ACS nano vol. 10,3 (2016): 3580-8. doi: https://doi.org/10.1021/acsnano.5b08008
Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GR, Eichfeld SM, Burke RA, Shah PB, O'Regan TP, Crowne FJ, Birdwell AG, Robinson JA, Davydov AV, Ivanov TG. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. ACS Nano. 2016 Mar 22;10(3):3580-8. doi: 10.1021/acsnano.5b08008. Epub 2016 Feb 19. PMID: 26866442.
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Electric-field induced structural transition in vertical MoTe.

Nature materials

Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J.
PMID: 30542093
Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10.

Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H semiconducting to a distorted transient structure (2H

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Zhang F, Zhang H, Krylyuk S, et al. Electric-field induced structural transition in vertical MoTe. Nat Mater. 2018;18(1):55-61doi: 10.1038/s41563-018-0234-y.
Zhang, F., Zhang, H., Krylyuk, S., Milligan, C. A., Zhu, Y., Zemlyanov, D. Y., Bendersky, L. A., Burton, B. P., Davydov, A. V., & Appenzeller, J. (2019). Electric-field induced structural transition in vertical MoTe. Nature materials, 18(1), 55-61. https://doi.org/10.1038/s41563-018-0234-y
Zhang, Feng, et al. "Electric-field induced structural transition in vertical MoTe." Nature materials vol. 18,1 (2019): 55-61. doi: https://doi.org/10.1038/s41563-018-0234-y
Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J. Electric-field induced structural transition in vertical MoTe. Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10. PMID: 30542093.
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Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd.

Scientific reports

Oveshnikov LN, Davydov AB, Suslov AV, Ril' AI, Marenkin SF, Vasiliev AL, Aronzon BA.
PMID: 32165644
Sci Rep. 2020 Mar 12;10(1):4601. doi: 10.1038/s41598-020-61376-6.

In this study we observed the reproducible superconducting state in Cd

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Oveshnikov LN, Davydov AB, Suslov AV, et al. Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd. Sci Rep. 2020;10(1):4601doi: 10.1038/s41598-020-61376-6.
Oveshnikov, L. N., Davydov, A. B., Suslov, A. V., Ril', A. I., Marenkin, S. F., Vasiliev, A. L., & Aronzon, B. A. (2020). Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd. Scientific reports, 10(1), 4601. https://doi.org/10.1038/s41598-020-61376-6
Oveshnikov, Leonid N, et al. "Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd." Scientific reports vol. 10,1 (2020): 4601. doi: https://doi.org/10.1038/s41598-020-61376-6
Oveshnikov LN, Davydov AB, Suslov AV, Ril' AI, Marenkin SF, Vasiliev AL, Aronzon BA. Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd. Sci Rep. 2020 Mar 12;10(1):4601. doi: 10.1038/s41598-020-61376-6. PMID: 32165644; PMCID: PMC7067877.
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Tuning the hysteresis of a metal-insulator transition via lattice compatibility.

Nature communications

Liang YG, Lee S, Yu HS, Zhang HR, Liang YJ, Zavalij PY, Chen X, James RD, Bendersky LA, Davydov AV, Zhang XH, Takeuchi I.
PMID: 32669544
Nat Commun. 2020 Jul 15;11(1):3539. doi: 10.1038/s41467-020-17351-w.

Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis,...

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Liang YG, Lee S, Yu HS, et al. Tuning the hysteresis of a metal-insulator transition via lattice compatibility. Nat Commun. 2020;11(1):3539doi: 10.1038/s41467-020-17351-w.
Liang, Y. G., Lee, S., Yu, H. S., Zhang, H. R., Liang, Y. J., Zavalij, P. Y., Chen, X., James, R. D., Bendersky, L. A., Davydov, A. V., Zhang, X. H., & Takeuchi, I. (2020). Tuning the hysteresis of a metal-insulator transition via lattice compatibility. Nature communications, 11(1), 3539. https://doi.org/10.1038/s41467-020-17351-w
Liang, Y G, et al. "Tuning the hysteresis of a metal-insulator transition via lattice compatibility." Nature communications vol. 11,1 (2020): 3539. doi: https://doi.org/10.1038/s41467-020-17351-w
Liang YG, Lee S, Yu HS, Zhang HR, Liang YJ, Zavalij PY, Chen X, James RD, Bendersky LA, Davydov AV, Zhang XH, Takeuchi I. Tuning the hysteresis of a metal-insulator transition via lattice compatibility. Nat Commun. 2020 Jul 15;11(1):3539. doi: 10.1038/s41467-020-17351-w. PMID: 32669544; PMCID: PMC7363867.
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Comprehensive optical characterization of atomically thin NbSe.

Physical review. B

Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH.
PMID: 30984898
Phys Rev B. 2018;98. doi: 10.1103/PhysRevB.98.165109.

Transition-metal dichalcogenides (TMDCs) have offered experimental access to quantum confinement in one dimension. In recent years, metallic TMDCs like NbSe

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Hill HM, Rigosi AF, Krylyuk S, et al. Comprehensive optical characterization of atomically thin NbSe. Phys Rev B. 2018;98doi: 10.1103/PhysRevB.98.165109.
Hill, H. M., Rigosi, A. F., Krylyuk, S., Tian, J., Nguyen, N. V., Davydov, A. V., Newell, D. B., & Walker, A. R. H. (2018). Comprehensive optical characterization of atomically thin NbSe. Physical review. B, 98. https://doi.org/10.1103/PhysRevB.98.165109
Hill, Heather M, et al. "Comprehensive optical characterization of atomically thin NbSe." Physical review. B vol. 98 (2018). doi: https://doi.org/10.1103/PhysRevB.98.165109
Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH. Comprehensive optical characterization of atomically thin NbSe. Phys Rev B. 2018;98. doi: 10.1103/PhysRevB.98.165109. PMID: 30984898; PMCID: PMC6459197.
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Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods.

Nanoscale

Robin Y, Evropeitsev EA, Shubina TV, Kirilenko DA, Davydov VY, Smirnov AN, Toropov AA, Eliseyev IA, Bae SY, Kushimoto M, Nitta S, Ivanov SV, Amano H.
PMID: 30525165
Nanoscale. 2018 Dec 20;11(1):193-199. doi: 10.1039/c8nr05863f.

Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core-shell nanorods (NRs) were investigated from 6 K up to 285 K. The NRs exhibit three well-defined PL bands in the near-UV, blue, and green range ascribed to the emission...

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Robin Y, Evropeitsev EA, Shubina TV, et al. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods. Nanoscale. 2018;11(1):193-199doi: 10.1039/c8nr05863f.
Robin, Y., Evropeitsev, E. A., Shubina, T. V., Kirilenko, D. A., Davydov, V. Y., Smirnov, A. N., Toropov, A. A., Eliseyev, I. A., Bae, S. Y., Kushimoto, M., Nitta, S., Ivanov, S. V., & Amano, H. (2018). Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods. Nanoscale, 11(1), 193-199. https://doi.org/10.1039/c8nr05863f
Robin, Y, et al. "Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods." Nanoscale vol. 11,1 (2018): 193-199. doi: https://doi.org/10.1039/c8nr05863f
Robin Y, Evropeitsev EA, Shubina TV, Kirilenko DA, Davydov VY, Smirnov AN, Toropov AA, Eliseyev IA, Bae SY, Kushimoto M, Nitta S, Ivanov SV, Amano H. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods. Nanoscale. 2018 Dec 20;11(1):193-199. doi: 10.1039/c8nr05863f. PMID: 30525165.
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Health in medicine: The lost graal.

Journal of psychosomatic research

Davydov DM.
PMID: 29935750
J Psychosom Res. 2018 Aug;111:22-26. doi: 10.1016/j.jpsychores.2018.05.006. Epub 2018 May 25.

No abstract available.

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Davydov DM. Health in medicine: The lost graal. J Psychosom Res. 2018;111:22-26doi: 10.1016/j.jpsychores.2018.05.006.
Davydov, D. M. (2018). Health in medicine: The lost graal. Journal of psychosomatic research, 11122-26. https://doi.org/10.1016/j.jpsychores.2018.05.006
Davydov, Dmitry M. "Health in medicine: The lost graal." Journal of psychosomatic research vol. 111 (2018): 22-26. doi: https://doi.org/10.1016/j.jpsychores.2018.05.006
Davydov DM. Health in medicine: The lost graal. J Psychosom Res. 2018 Aug;111:22-26. doi: 10.1016/j.jpsychores.2018.05.006. Epub 2018 May 25. PMID: 29935750.
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Biofabrication of 3D printed hydroxyapatite composite scaffolds for bone regeneration.

Biomedical materials (Bristol, England)

Kim Y, Lee EJ, Davydov AV, Frukhtbeyen S, Seppala JE, Takagi S, Chow L, Alimperti S.
PMID: 33254152
Biomed Mater. 2021 Mar 08;16(4). doi: 10.1088/1748-605X/abcf03.

Biofabrication has been adapted in engineering patient-specific biosynthetic grafts for bone regeneration. Herein, we developed a three-dimensional (3D) high-resolution, room-temperature printing approach to fabricate osteoconductive scaffolds using calcium phosphate cement (CPC). The non-aqueous CPC bioinks were composed of tetracalcium...

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Kim Y, Lee EJ, Davydov AV, et al. Biofabrication of 3D printed hydroxyapatite composite scaffolds for bone regeneration. Biomed Mater. 2021;16(4)doi: 10.1088/1748-605X/abcf03.
Kim, Y., Lee, E. J., Davydov, A. V., Frukhtbeyen, S., Seppala, J. E., Takagi, S., Chow, L., & Alimperti, S. (2021). Biofabrication of 3D printed hydroxyapatite composite scaffolds for bone regeneration. Biomedical materials (Bristol, England), 16(4), . https://doi.org/10.1088/1748-605X/abcf03
Kim, Yoontae, et al. "Biofabrication of 3D printed hydroxyapatite composite scaffolds for bone regeneration." Biomedical materials (Bristol, England) vol. 16,4 (2021). doi: https://doi.org/10.1088/1748-605X/abcf03
Kim Y, Lee EJ, Davydov AV, Frukhtbeyen S, Seppala JE, Takagi S, Chow L, Alimperti S. Biofabrication of 3D printed hydroxyapatite composite scaffolds for bone regeneration. Biomed Mater. 2021 Mar 08;16(4). doi: 10.1088/1748-605X/abcf03. PMID: 33254152; PMCID: PMC8164647.
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Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines.

Nanomaterials (Basel, Switzerland)

Murzakhanov FF, Yavkin BV, Mamin GV, Orlinskii SB, Mumdzhi IE, Gracheva IN, Gabbasov BF, Smirnov AN, Davydov VY, Soltamov VA.
PMID: 34067260
Nanomaterials (Basel). 2021 May 22;11(6). doi: 10.3390/nano11061373.

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged...

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Murzakhanov FF, Yavkin BV, Mamin GV, et al. Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines. Nanomaterials (Basel). 2021;11(6)doi: 10.3390/nano11061373.
Murzakhanov, F. F., Yavkin, B. V., Mamin, G. V., Orlinskii, S. B., Mumdzhi, I. E., Gracheva, I. N., Gabbasov, B. F., Smirnov, A. N., Davydov, V. Y., & Soltamov, V. A. (2021). Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines. Nanomaterials (Basel, Switzerland), 11(6), . https://doi.org/10.3390/nano11061373
Murzakhanov, Fadis F, et al. "Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines." Nanomaterials (Basel, Switzerland) vol. 11,6 (2021). doi: https://doi.org/10.3390/nano11061373
Murzakhanov FF, Yavkin BV, Mamin GV, Orlinskii SB, Mumdzhi IE, Gracheva IN, Gabbasov BF, Smirnov AN, Davydov VY, Soltamov VA. Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines. Nanomaterials (Basel). 2021 May 22;11(6). doi: 10.3390/nano11061373. PMID: 34067260; PMCID: PMC8224795.
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Showing 13 to 24 of 120 entries