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Maeng WJ, Choi DW, Chung KB, et al. Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2InN(SiMe3)2. ACS Appl Mater Interfaces. 2014;6(20):17481-8doi: 10.1021/am502085c.
Maeng, W. J., Choi, D. W., Chung, K. B., Koh, W., Kim, G. Y., Choi, S. Y., & Park, J. S. (2014). Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2InN(SiMe3)2. ACS applied materials & interfaces, 6(20), 17481-8. https://doi.org/10.1021/am502085c
Maeng, Wan Joo, et al. "Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2InN(SiMe3)2." ACS applied materials & interfaces vol. 6,20 (2014): 17481-8. doi: https://doi.org/10.1021/am502085c
Maeng WJ, Choi DW, Chung KB, Koh W, Kim GY, Choi SY, Park JS. Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2InN(SiMe3)2. ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17481-8. doi: 10.1021/am502085c. Epub 2014 Oct 07. PMID: 25259752.
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