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Kim JH, Elmaghraoui D, Leroux M, et al. Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition. Nanotechnology. 2014;25(30):305703doi: 10.1088/0957-4484/25/30/305703.
Kim, J. H., Elmaghraoui, D., Leroux, M., Korytov, M., Vennéguès, P., Jaziri, S., Brault, J., & Cho, Y. H. (2014). Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition. Nanotechnology, 25(30), 305703. https://doi.org/10.1088/0957-4484/25/30/305703
Kim, Je-Hyung, et al. "Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition." Nanotechnology vol. 25,30 (2014): 305703. doi: https://doi.org/10.1088/0957-4484/25/30/305703
Kim JH, Elmaghraoui D, Leroux M, Korytov M, Vennéguès P, Jaziri S, Brault J, Cho YH. Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition. Nanotechnology. 2014 Aug 01;25(30):305703. doi: 10.1088/0957-4484/25/30/305703. Epub 2014 Jul 10. PMID: 25008561.
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