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Showing 1 to 7 of 7 entries
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Negative electronic compressibility and tunable spin splitting in WSe2.

Nature nanotechnology

Riley JM, Meevasana W, Bawden L, Asakawa M, Takayama T, Eknapakul T, Kim TK, Hoesch M, Mo SK, Takagi H, Sasagawa T, Bahramy MS, King PD.
PMID: 26389661
Nat Nanotechnol. 2015 Dec;10(12):1043-7. doi: 10.1038/nnano.2015.217. Epub 2015 Sep 21.

Tunable bandgaps, extraordinarily large exciton-binding energies, strong light-matter coupling and a locking of the electron spin with layer and valley pseudospins have established transition-metal dichalcogenides (TMDs) as a unique class of two-dimensional (2D) semiconductors with wide-ranging practical applications. Using...

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Riley JM, Meevasana W, Bawden L, et al. Negative electronic compressibility and tunable spin splitting in WSe2. Nat Nanotechnol. 2015;10(12):1043-7doi: 10.1038/nnano.2015.217.
Riley, J. M., Meevasana, W., Bawden, L., Asakawa, M., Takayama, T., Eknapakul, T., Kim, T. K., Hoesch, M., Mo, S. K., Takagi, H., Sasagawa, T., Bahramy, M. S., & King, P. D. (2015). Negative electronic compressibility and tunable spin splitting in WSe2. Nature nanotechnology, 10(12), 1043-7. https://doi.org/10.1038/nnano.2015.217
Riley, J M, et al. "Negative electronic compressibility and tunable spin splitting in WSe2." Nature nanotechnology vol. 10,12 (2015): 1043-7. doi: https://doi.org/10.1038/nnano.2015.217
Riley JM, Meevasana W, Bawden L, Asakawa M, Takayama T, Eknapakul T, Kim TK, Hoesch M, Mo SK, Takagi H, Sasagawa T, Bahramy MS, King PD. Negative electronic compressibility and tunable spin splitting in WSe2. Nat Nanotechnol. 2015 Dec;10(12):1043-7. doi: 10.1038/nnano.2015.217. Epub 2015 Sep 21. PMID: 26389661.
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Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides.

Nature materials

Bahramy MS, Clark OJ, Yang BJ, Feng J, Bawden L, Riley JM, Marković I, Mazzola F, Sunko V, Biswas D, Cooil SP, Jorge M, Wells JW, Leandersson M, Balasubramanian T, Fujii J, Vobornik I, Rault JE, Kim TK, Hoesch M, Okawa K, Asakawa M, Sasagawa T, Eknapakul T, Meevasana W, King PDC.
PMID: 29180775
Nat Mater. 2018 Jan;17(1):21-28. doi: 10.1038/nmat5031. Epub 2017 Nov 27.

Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied bulk properties, while their single-layer variants have become one of the most prominent examples of two-dimensional materials beyond graphene. Their disparate ground states largely depend on transition metal d-electron-derived...

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Bahramy MS, Clark OJ, Yang BJ, et al. Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides. Nat Mater. 2017;17(1):21-28doi: 10.1038/nmat5031.
Bahramy, M. S., Clark, O. J., Yang, B. J., Feng, J., Bawden, L., Riley, J. M., Marković, I., Mazzola, F., Sunko, V., Biswas, D., Cooil, S. P., Jorge, M., Wells, J. W., Leandersson, M., Balasubramanian, T., Fujii, J., Vobornik, I., Rault, J. E., Kim, T. K., Hoesch, M., Okawa, K., Asakawa, M., Sasagawa, T., Eknapakul, T., Meevasana, W., & King, P. D. C. (2018). Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides. Nature materials, 17(1), 21-28. https://doi.org/10.1038/nmat5031
Bahramy, M S, et al. "Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides." Nature materials vol. 17,1 (2018): 21-28. doi: https://doi.org/10.1038/nmat5031
Bahramy MS, Clark OJ, Yang BJ, Feng J, Bawden L, Riley JM, Marković I, Mazzola F, Sunko V, Biswas D, Cooil SP, Jorge M, Wells JW, Leandersson M, Balasubramanian T, Fujii J, Vobornik I, Rault JE, Kim TK, Hoesch M, Okawa K, Asakawa M, Sasagawa T, Eknapakul T, Meevasana W, King PDC. Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides. Nat Mater. 2018 Jan;17(1):21-28. doi: 10.1038/nmat5031. Epub 2017 Nov 27. PMID: 29180775.
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Resistive switching in diamondoid thin films.

Scientific reports

Jantayod A, Doonyapisut D, Eknapakul T, Smith MF, Meevasana W.
PMID: 33149239
Sci Rep. 2020 Nov 04;10(1):19009. doi: 10.1038/s41598-020-76093-3.

The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited...

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Jantayod A, Doonyapisut D, Eknapakul T, et al. Resistive switching in diamondoid thin films. Sci Rep. 2020;10(1):19009doi: 10.1038/s41598-020-76093-3.
Jantayod, A., Doonyapisut, D., Eknapakul, T., Smith, M. F., & Meevasana, W. (2020). Resistive switching in diamondoid thin films. Scientific reports, 10(1), 19009. https://doi.org/10.1038/s41598-020-76093-3
Jantayod, A, et al. "Resistive switching in diamondoid thin films." Scientific reports vol. 10,1 (2020): 19009. doi: https://doi.org/10.1038/s41598-020-76093-3
Jantayod A, Doonyapisut D, Eknapakul T, Smith MF, Meevasana W. Resistive switching in diamondoid thin films. Sci Rep. 2020 Nov 04;10(1):19009. doi: 10.1038/s41598-020-76093-3. PMID: 33149239; PMCID: PMC7642435.
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Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi.

Scientific reports

Nathabumroong S, Eknapakul T, Jaiban P, Yotburut B, Siriroj S, Saisopa T, Mo SK, Supruangnet R, Nakajima H, Yimnirun R, Maensiri S, Meevasana W.
PMID: 32198381
Sci Rep. 2020 Mar 20;10(1):5153. doi: 10.1038/s41598-020-61859-6.

Light-sensitive capacitance variation of Bi

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Nathabumroong S, Eknapakul T, Jaiban P, et al. Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi. Sci Rep. 2020;10(1):5153doi: 10.1038/s41598-020-61859-6.
Nathabumroong, S., Eknapakul, T., Jaiban, P., Yotburut, B., Siriroj, S., Saisopa, T., Mo, S. K., Supruangnet, R., Nakajima, H., Yimnirun, R., Maensiri, S., & Meevasana, W. (2020). Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi. Scientific reports, 10(1), 5153. https://doi.org/10.1038/s41598-020-61859-6
Nathabumroong, S, et al. "Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi." Scientific reports vol. 10,1 (2020): 5153. doi: https://doi.org/10.1038/s41598-020-61859-6
Nathabumroong S, Eknapakul T, Jaiban P, Yotburut B, Siriroj S, Saisopa T, Mo SK, Supruangnet R, Nakajima H, Yimnirun R, Maensiri S, Meevasana W. Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi. Sci Rep. 2020 Mar 20;10(1):5153. doi: 10.1038/s41598-020-61859-6. PMID: 32198381; PMCID: PMC7083945.
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Electronic structure of a quasi-freestanding MoS₂ monolayer.

Nano letters

Eknapakul T, King PD, Asakawa M, Buaphet P, He RH, Mo SK, Takagi H, Shen KM, Baumberger F, Sasagawa T, Jungthawan S, Meevasana W.
PMID: 24552197
Nano Lett. 2014 Mar 12;14(3):1312-6. doi: 10.1021/nl4042824. Epub 2014 Feb 24.

Several transition-metal dichalcogenides exhibit a striking crossover from indirect to direct band gap semiconductors as they are thinned down to a single monolayer. Here, we demonstrate how an electronic structure characteristic of the isolated monolayer can be created at...

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Eknapakul T, King PD, Asakawa M, et al. Electronic structure of a quasi-freestanding MoS₂ monolayer. Nano Lett. 2014;14(3):1312-6doi: 10.1021/nl4042824.
Eknapakul, T., King, P. D., Asakawa, M., Buaphet, P., He, R. H., Mo, S. K., Takagi, H., Shen, K. M., Baumberger, F., Sasagawa, T., Jungthawan, S., & Meevasana, W. (2014). Electronic structure of a quasi-freestanding MoS₂ monolayer. Nano letters, 14(3), 1312-6. https://doi.org/10.1021/nl4042824
Eknapakul, T, et al. "Electronic structure of a quasi-freestanding MoS₂ monolayer." Nano letters vol. 14,3 (2014): 1312-6. doi: https://doi.org/10.1021/nl4042824
Eknapakul T, King PD, Asakawa M, Buaphet P, He RH, Mo SK, Takagi H, Shen KM, Baumberger F, Sasagawa T, Jungthawan S, Meevasana W. Electronic structure of a quasi-freestanding MoS₂ monolayer. Nano Lett. 2014 Mar 12;14(3):1312-6. doi: 10.1021/nl4042824. Epub 2014 Feb 24. PMID: 24552197.
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Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition.

Scientific reports

Jaiban P, Lu MH, Eknapakul T, Chaiyachad S, Yao SH, Pisitpipathsin N, Unruan M, Siriroj S, He RH, Mo SK, Watcharapasorn A, Yimnirun R, Tokura Y, Shen ZX, Hwang HY, Maensiri S, Meevasana W.
PMID: 33033329
Sci Rep. 2020 Oct 08;10(1):16834. doi: 10.1038/s41598-020-73657-1.

The discovery of a two-dimensional electron gas (2DEG) at the [Formula: see text] interface has set a new platform for all-oxide electronics which could potentially exhibit the interplay among charge, spin, orbital, superconductivity, ferromagnetism and ferroelectricity. In this work,...

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Jaiban P, Lu MH, Eknapakul T, et al. Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition. Sci Rep. 2020;10(1):16834doi: 10.1038/s41598-020-73657-1.
Jaiban, P., Lu, M. H., Eknapakul, T., Chaiyachad, S., Yao, S. H., Pisitpipathsin, N., Unruan, M., Siriroj, S., He, R. H., Mo, S. K., Watcharapasorn, A., Yimnirun, R., Tokura, Y., Shen, Z. X., Hwang, H. Y., Maensiri, S., & Meevasana, W. (2020). Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition. Scientific reports, 10(1), 16834. https://doi.org/10.1038/s41598-020-73657-1
Jaiban, P, et al. "Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition." Scientific reports vol. 10,1 (2020): 16834. doi: https://doi.org/10.1038/s41598-020-73657-1
Jaiban P, Lu MH, Eknapakul T, Chaiyachad S, Yao SH, Pisitpipathsin N, Unruan M, Siriroj S, He RH, Mo SK, Watcharapasorn A, Yimnirun R, Tokura Y, Shen ZX, Hwang HY, Maensiri S, Meevasana W. Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition. Sci Rep. 2020 Oct 08;10(1):16834. doi: 10.1038/s41598-020-73657-1. PMID: 33033329; PMCID: PMC7545169.
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Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO3.

Physical review letters

King PD, He RH, Eknapakul T, Buaphet P, Mo SK, Kaneko Y, Harashima S, Hikita Y, Bahramy MS, Bell C, Hussain Z, Tokura Y, Shen ZX, Hwang HY, Baumberger F, Meevasana W.
PMID: 22540511
Phys Rev Lett. 2012 Mar 16;108(11):117602. doi: 10.1103/PhysRevLett.108.117602. Epub 2012 Mar 14.

We demonstrate the formation of a two-dimensional electron gas (2DEG) at the (100) surface of the 5d transition-metal oxide KTaO3. From angle-resolved photoemission, we find that quantum confinement lifts the orbital degeneracy of the bulk band structure and leads...

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King PD, He RH, Eknapakul T, et al. Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO3. Phys Rev Lett. 2012;108(11):117602doi: 10.1103/PhysRevLett.108.117602.
King, P. D., He, R. H., Eknapakul, T., Buaphet, P., Mo, S. K., Kaneko, Y., Harashima, S., Hikita, Y., Bahramy, M. S., Bell, C., Hussain, Z., Tokura, Y., Shen, Z. X., Hwang, H. Y., Baumberger, F., & Meevasana, W. (2012). Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO3. Physical review letters, 108(11), 117602. https://doi.org/10.1103/PhysRevLett.108.117602
King, P D C, et al. "Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO3." Physical review letters vol. 108,11 (2012): 117602. doi: https://doi.org/10.1103/PhysRevLett.108.117602
King PD, He RH, Eknapakul T, Buaphet P, Mo SK, Kaneko Y, Harashima S, Hikita Y, Bahramy MS, Bell C, Hussain Z, Tokura Y, Shen ZX, Hwang HY, Baumberger F, Meevasana W. Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO3. Phys Rev Lett. 2012 Mar 16;108(11):117602. doi: 10.1103/PhysRevLett.108.117602. Epub 2012 Mar 14. PMID: 22540511.
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Showing 1 to 7 of 7 entries