Cite
Chen PC, Shen G, Chen H, et al. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays. ACS Nano. 2009;3(11):3383-90doi: 10.1021/nn900704c.
Chen, P. C., Shen, G., Chen, H., Ha, Y. G., Wu, C., Sukcharoenchoke, S., Fu, Y., Liu, J., Facchetti, A., Marks, T. J., Thompson, M. E., & Zhou, C. (2009). High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays. ACS nano, 3(11), 3383-90. https://doi.org/10.1021/nn900704c
Chen, Po-Chiang, et al. "High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays." ACS nano vol. 3,11 (2009): 3383-90. doi: https://doi.org/10.1021/nn900704c
Chen PC, Shen G, Chen H, Ha YG, Wu C, Sukcharoenchoke S, Fu Y, Liu J, Facchetti A, Marks TJ, Thompson ME, Zhou C. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays. ACS Nano. 2009 Nov 24;3(11):3383-90. doi: 10.1021/nn900704c. PMID: 19842677.
Copy
Download .nbib