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Chichibu SF, Uedono A, Onuma T, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nat Mater. 2006;5(10):810-6doi: 10.1038/nmat1726.
Chichibu, S. F., Uedono, A., Onuma, T., Haskell, B. A., Chakraborty, A., Koyama, T., Fini, P. T., Keller, S., Denbaars, S. P., Speck, J. S., Mishra, U. K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., & Sota, T. (2006). Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature materials, 5(10), 810-6. https://doi.org/10.1038/nmat1726
Chichibu, Shigefusa F, et al. "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors." Nature materials vol. 5,10 (2006): 810-6. doi: https://doi.org/10.1038/nmat1726
Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, Akasaki I, Han J, Sota T. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nat Mater. 2006 Oct;5(10):810-6. doi: 10.1038/nmat1726. Epub 2006 Sep 03. PMID: 16951678.
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