Cite
Wang J, Li S, Zou X, et al. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. Small. 2015;11(44):5932-8doi: 10.1002/smll.201501260.
Wang, J., Li, S., Zou, X., Ho, J., Liao, L., Xiao, X., Jiang, C., Hu, W., Wang, J., & Li, J. (2015). Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. Small (Weinheim an der Bergstrasse, Germany), 11(44), 5932-8. https://doi.org/10.1002/smll.201501260
Wang, Jingli, et al. "Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation." Small (Weinheim an der Bergstrasse, Germany) vol. 11,44 (2015): 5932-8. doi: https://doi.org/10.1002/smll.201501260
Wang J, Li S, Zou X, Ho J, Liao L, Xiao X, Jiang C, Hu W, Wang J, Li J. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. Small. 2015 Nov 25;11(44):5932-8. doi: 10.1002/smll.201501260. Epub 2015 Oct 01. PMID: 26426344.
Copy
Download .nbib