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Electrical spin injection into high mobility 2D systems.

Physical review letters

Oltscher M, Ciorga M, Utz M, Schuh D, Bougeard D, Weiss D.
PMID: 25526144
Phys Rev Lett. 2014 Dec 05;113(23):236602. doi: 10.1103/PhysRevLett.113.236602. Epub 2014 Dec 04.

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied...

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Oltscher M, Ciorga M, Utz M, et al. Electrical spin injection into high mobility 2D systems. Phys Rev Lett. 2014;113(23):236602doi: 10.1103/PhysRevLett.113.236602.
Oltscher, M., Ciorga, M., Utz, M., Schuh, D., Bougeard, D., & Weiss, D. (2014). Electrical spin injection into high mobility 2D systems. Physical review letters, 113(23), 236602. https://doi.org/10.1103/PhysRevLett.113.236602
Oltscher, M, et al. "Electrical spin injection into high mobility 2D systems." Physical review letters vol. 113,23 (2014): 236602. doi: https://doi.org/10.1103/PhysRevLett.113.236602
Oltscher M, Ciorga M, Utz M, Schuh D, Bougeard D, Weiss D. Electrical spin injection into high mobility 2D systems. Phys Rev Lett. 2014 Dec 05;113(23):236602. doi: 10.1103/PhysRevLett.113.236602. Epub 2014 Dec 04. PMID: 25526144.
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Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co.

Dalton transactions (Cambridge, England : 2003)

Klotzsche M, Barreca D, Bigiani L, Seraglia R, Gasparotto A, Vanin L, Jandl C, Pöthig A, Roverso M, Bogialli S, Tabacchi G, Fois E, Callone E, Dirè S, Maccato C.
PMID: 34286774
Dalton Trans. 2021 Aug 04;50(30):10374-10385. doi: 10.1039/d1dt01650d.

Co3O4 thin films and nanosystems are implemented in a broad range of functional systems, including gas sensors, (photo)catalysts, and electrochemical devices for energy applications. In this regard, chemical vapor deposition (CVD) is a promising route for the fabrication of...

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Klotzsche M, Barreca D, Bigiani L, et al. Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co. Dalton Trans. 2021;50(30):10374-10385doi: 10.1039/d1dt01650d.
Klotzsche, M., Barreca, D., Bigiani, L., Seraglia, R., Gasparotto, A., Vanin, L., Jandl, C., Pöthig, A., Roverso, M., Bogialli, S., Tabacchi, G., Fois, E., Callone, E., Dirè, S., & Maccato, C. (2021). Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co. Dalton transactions (Cambridge, England : 2003), 50(30), 10374-10385. https://doi.org/10.1039/d1dt01650d
Klotzsche, Max, et al. "Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co." Dalton transactions (Cambridge, England : 2003) vol. 50,30 (2021): 10374-10385. doi: https://doi.org/10.1039/d1dt01650d
Klotzsche M, Barreca D, Bigiani L, Seraglia R, Gasparotto A, Vanin L, Jandl C, Pöthig A, Roverso M, Bogialli S, Tabacchi G, Fois E, Callone E, Dirè S, Maccato C. Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co. Dalton Trans. 2021 Aug 04;50(30):10374-10385. doi: 10.1039/d1dt01650d. PMID: 34286774.
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Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Nature communications

Oltscher M, Eberle F, Kuczmik T, Bayer A, Schuh D, Bougeard D, Ciorga M, Weiss D.
PMID: 29176607
Nat Commun. 2017 Nov 27;8(1):1807. doi: 10.1038/s41467-017-01933-2.

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with...

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Oltscher M, Eberle F, Kuczmik T, et al. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device. Nat Commun. 2017;8(1):1807doi: 10.1038/s41467-017-01933-2.
Oltscher, M., Eberle, F., Kuczmik, T., Bayer, A., Schuh, D., Bougeard, D., Ciorga, M., & Weiss, D. (2017). Gate-tunable large magnetoresistance in an all-semiconductor spin valve device. Nature communications, 8(1), 1807. https://doi.org/10.1038/s41467-017-01933-2
Oltscher, M, et al. "Gate-tunable large magnetoresistance in an all-semiconductor spin valve device." Nature communications vol. 8,1 (2017): 1807. doi: https://doi.org/10.1038/s41467-017-01933-2
Oltscher M, Eberle F, Kuczmik T, Bayer A, Schuh D, Bougeard D, Ciorga M, Weiss D. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device. Nat Commun. 2017 Nov 27;8(1):1807. doi: 10.1038/s41467-017-01933-2. PMID: 29176607; PMCID: PMC5702618.
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Showing 1 to 3 of 3 entries