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Stoeckel MA, Gobbi M, Leydecker T, et al. Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe. ACS Nano. 2019;13(10):11613-11622doi: 10.1021/acsnano.9b05423.
Stoeckel, M. A., Gobbi, M., Leydecker, T., Wang, Y., Eredia, M., Bonacchi, S., Verucchi, R., Timpel, M., Nardi, M. V., Orgiu, E., & Samorì, P. (2019). Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe. ACS nano, 13(10), 11613-11622. https://doi.org/10.1021/acsnano.9b05423
Stoeckel, Marc-Antoine, et al. "Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe." ACS nano vol. 13,10 (2019): 11613-11622. doi: https://doi.org/10.1021/acsnano.9b05423
Stoeckel MA, Gobbi M, Leydecker T, Wang Y, Eredia M, Bonacchi S, Verucchi R, Timpel M, Nardi MV, Orgiu E, Samorì P. Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe. ACS Nano. 2019 Oct 22;13(10):11613-11622. doi: 10.1021/acsnano.9b05423. Epub 2019 Sep 16. PMID: 31509382.
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