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Niethammer M, Widmann M, Rendler T, et al. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nat Commun. 2019;10(1):5569doi: 10.1038/s41467-019-13545-z.
Niethammer, M., Widmann, M., Rendler, T., Morioka, N., Chen, Y. C., Stöhr, R., Hassan, J. U., Onoda, S., Ohshima, T., Lee, S. Y., Mukherjee, A., Isoya, J., Son, N. T., & Wrachtrup, J. (2019). Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nature communications, 10(1), 5569. https://doi.org/10.1038/s41467-019-13545-z
Niethammer, Matthias, et al. "Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions." Nature communications vol. 10,1 (2019): 5569. doi: https://doi.org/10.1038/s41467-019-13545-z
Niethammer M, Widmann M, Rendler T, Morioka N, Chen YC, Stöhr R, Hassan JU, Onoda S, Ohshima T, Lee SY, Mukherjee A, Isoya J, Son NT, Wrachtrup J. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nat Commun. 2019 Dec 05;10(1):5569. doi: 10.1038/s41467-019-13545-z. PMID: 31804489; PMCID: PMC6895084.
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