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Showing 1 to 12 of 12 entries
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[The handicapped and the ill as outcasts from the productive society].

Fortschritte der Medizin

Paeslack V.
PMID: 142742
Fortschr Med. 1977 Aug 18;95(31):1887-8, 1922.

No abstract available.

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Paeslack V. Der Behinderte und der Kranke als Outcast der Leistungsgesellschaft. [The handicapped and the ill as outcasts from the productive society]. Fortschr Med. 1977;95(31):1887-8, 1922
Paeslack, V. (1977). Der Behinderte und der Kranke als Outcast der Leistungsgesellschaft. [The handicapped and the ill as outcasts from the productive society]. Fortschritte der Medizin, 95(31), 1887-8, 1922.
Paeslack, V. "Der Behinderte und der Kranke als Outcast der Leistungsgesellschaft." [The handicapped and the ill as outcasts from the productive society]. Fortschritte der Medizin vol. 95,31 (1977): 1887-8, 1922.
Paeslack V. Der Behinderte und der Kranke als Outcast der Leistungsgesellschaft. [The handicapped and the ill as outcasts from the productive society]. Fortschr Med. 1977 Aug 18;95(31):1887-8, 1922. German. PMID: 142742.
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Control of parallel hippocampal output pathways by amygdalar long-range inhibition.

eLife

AlSubaie R, Wee RW, Ritoux A, Mishchanchuk K, Passlack J, Regester D, MacAskill AF.
PMID: 34845987
Elife. 2021 Nov 30;10. doi: 10.7554/eLife.74758.

Projections from the basal amygdala (BA) to the ventral hippocampus (vH) are proposed to provide information about the rewarding or threatening nature of learned associations to support appropriate goal-directed and anxiety-like behaviour. Such behaviour occurs via the differential activity...

Cite
AlSubaie R, Wee RW, Ritoux A, et al. Control of parallel hippocampal output pathways by amygdalar long-range inhibition. Elife. 2021;10doi: 10.7554/eLife.74758.
AlSubaie, R., Wee, R. W., Ritoux, A., Mishchanchuk, K., Passlack, J., Regester, D., & MacAskill, A. F. (2021). Control of parallel hippocampal output pathways by amygdalar long-range inhibition. eLife, 10. https://doi.org/10.7554/eLife.74758
AlSubaie, Rawan, et al. "Control of parallel hippocampal output pathways by amygdalar long-range inhibition." eLife vol. 10 (2021). doi: https://doi.org/10.7554/eLife.74758
AlSubaie R, Wee RW, Ritoux A, Mishchanchuk K, Passlack J, Regester D, MacAskill AF. Control of parallel hippocampal output pathways by amygdalar long-range inhibition. Elife. 2021 Nov 30;10. doi: 10.7554/eLife.74758. PMID: 34845987; PMCID: PMC8654375.
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[On the sociological aspects of diabetes mellitus].

Arztliche Wochenschrift

PAESLACK V.
PMID: 14429732
Arztl Wochensch. 1959 Nov 06;14:856-64.

No abstract available.

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PAESLACK V. [On the sociological aspects of diabetes mellitus]. Arztl Wochensch. 1959;14:856-64
PAESLACK, V. (1959). [On the sociological aspects of diabetes mellitus]. Arztliche Wochenschrift, 14856-64.
PAESLACK, V. "[On the sociological aspects of diabetes mellitus]." Arztliche Wochenschrift vol. 14 (1959): 856-64.
PAESLACK V. [On the sociological aspects of diabetes mellitus]. Arztl Wochensch. 1959 Nov 06;14:856-64. German. PMID: 14429732.
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The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4).

The Journal of chemical physics

Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M.
PMID: 15267453
J Chem Phys. 2004 Mar 22;120(12):5745-54. doi: 10.1063/1.1648016.

The surface structures formed upon deposition of In2O and Ga2O by molecular beam epitaxy onto the arsenic-rich GaAs(001)-c(2 x 8)/(2 x 4) surface have been studied using scanning tunneling microscopy and density functional theory. In2O initially bonds, with indium...

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Hale MJ, Sexton JZ, Winn DL, et al. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). J Chem Phys. 2004;120(12):5745-54doi: 10.1063/1.1648016.
Hale, M. J., Sexton, J. Z., Winn, D. L., Kummel, A. C., Erbudak, M., & Passlack, M. (2004). The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). The Journal of chemical physics, 120(12), 5745-54. https://doi.org/10.1063/1.1648016
Hale, M J, et al. "The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4)." The Journal of chemical physics vol. 120,12 (2004): 5745-54. doi: https://doi.org/10.1063/1.1648016
Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). J Chem Phys. 2004 Mar 22;120(12):5745-54. doi: 10.1063/1.1648016. PMID: 15267453.
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Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface.

The Journal of chemical physics

Winn DL, Hale MJ, Grassman TJ, Kummel AC, Droopad R, Passlack M.
PMID: 17343465
J Chem Phys. 2007 Feb 28;126(8):084703. doi: 10.1063/1.2363183.

The correlation between atomic bonding sites and the electronic structure of SiO on GaAs(001)-c(2x8)/(2x4) was investigated using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT). At low coverage, STM images reveal that SiO molecules...

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Winn DL, Hale MJ, Grassman TJ, et al. Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. J Chem Phys. 2007;126(8):084703doi: 10.1063/1.2363183.
Winn, D. L., Hale, M. J., Grassman, T. J., Kummel, A. C., Droopad, R., & Passlack, M. (2007). Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. The Journal of chemical physics, 126(8), 084703. https://doi.org/10.1063/1.2363183
Winn, Darby L, et al. "Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface." The Journal of chemical physics vol. 126,8 (2007): 084703. doi: https://doi.org/10.1063/1.2363183
Winn DL, Hale MJ, Grassman TJ, Kummel AC, Droopad R, Passlack M. Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. J Chem Phys. 2007 Feb 28;126(8):084703. doi: 10.1063/1.2363183. PMID: 17343465.
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Control of parallel hippocampal output pathways by amygdalar long-range inhibition.

eLife

AlSubaie R, Wee RW, Ritoux A, Mishchanchuk K, Passlack J, Regester D, MacAskill AF.
PMID: 34845987
Elife. 2021 Nov 30;10. doi: 10.7554/eLife.74758.

Projections from the basal amygdala (BA) to the ventral hippocampus (vH) are proposed to provide information about the rewarding or threatening nature of learned associations to support appropriate goal-directed and anxiety-like behaviour. Such behaviour occurs via the differential activity...

Cite
AlSubaie R, Wee RW, Ritoux A, et al. Control of parallel hippocampal output pathways by amygdalar long-range inhibition. Elife. 2021;10doi: 10.7554/eLife.74758.
AlSubaie, R., Wee, R. W., Ritoux, A., Mishchanchuk, K., Passlack, J., Regester, D., & MacAskill, A. F. (2021). Control of parallel hippocampal output pathways by amygdalar long-range inhibition. eLife, 10. https://doi.org/10.7554/eLife.74758
AlSubaie, Rawan, et al. "Control of parallel hippocampal output pathways by amygdalar long-range inhibition." eLife vol. 10 (2021). doi: https://doi.org/10.7554/eLife.74758
AlSubaie R, Wee RW, Ritoux A, Mishchanchuk K, Passlack J, Regester D, MacAskill AF. Control of parallel hippocampal output pathways by amygdalar long-range inhibition. Elife. 2021 Nov 30;10. doi: 10.7554/eLife.74758. PMID: 34845987; PMCID: PMC8654375.
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[A medical view of the rank of technical aids in rehabilitation (author's transl)].

Die Rehabilitation

Paeslack V.
PMID: 6452665
Rehabilitation (Stuttg). 1981 Feb;20(1):28-32.

Severe congenital or acquired physical impairments result in disabilities that, in the first instance, entail various disorders of functions the "normal" person has at his or her disposal. These, on the other hand, engender grave disturbances of the interpersonal...

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Paeslack V. Der Stellenwert der technischen Hilfe in der Rehabilitation aus ärztlicher Sicht. [A medical view of the rank of technical aids in rehabilitation (author's transl)]. Rehabilitation (Stuttg). 1981;20(1):28-32
Paeslack, V. (1981). Der Stellenwert der technischen Hilfe in der Rehabilitation aus ärztlicher Sicht. [A medical view of the rank of technical aids in rehabilitation (author's transl)]. Die Rehabilitation, 20(1), 28-32.
Paeslack, V. "Der Stellenwert der technischen Hilfe in der Rehabilitation aus ärztlicher Sicht." [A medical view of the rank of technical aids in rehabilitation (author's transl)]. Die Rehabilitation vol. 20,1 (1981): 28-32.
Paeslack V. Der Stellenwert der technischen Hilfe in der Rehabilitation aus ärztlicher Sicht. [A medical view of the rank of technical aids in rehabilitation (author's transl)]. Rehabilitation (Stuttg). 1981 Feb;20(1):28-32. German. PMID: 6452665.
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Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces.

The Journal of chemical physics

Shen J, Chagarov EA, Feldwinn DL, Melitz W, Santagata NM, Kummel AC, Droopad R, Passlack M.
PMID: 21033816
J Chem Phys. 2010 Oct 28;133(16):164704. doi: 10.1063/1.3497040.

Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O...

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Shen J, Chagarov EA, Feldwinn DL, et al. Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. J Chem Phys. 2010;133(16):164704doi: 10.1063/1.3497040.
Shen, J., Chagarov, E. A., Feldwinn, D. L., Melitz, W., Santagata, N. M., Kummel, A. C., Droopad, R., & Passlack, M. (2010). Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. The Journal of chemical physics, 133(16), 164704. https://doi.org/10.1063/1.3497040
Shen, Jian, et al. "Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces." The Journal of chemical physics vol. 133,16 (2010): 164704. doi: https://doi.org/10.1063/1.3497040
Shen J, Chagarov EA, Feldwinn DL, Melitz W, Santagata NM, Kummel AC, Droopad R, Passlack M. Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. J Chem Phys. 2010 Oct 28;133(16):164704. doi: 10.1063/1.3497040. PMID: 21033816.
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Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations.

Journal of physics. Condensed matter : an Institute of Physics journal

Afzalian A, Vasen T, Ramvall P, Shen TM, Wu J, Passlack M.
PMID: 29708499
J Phys Condens Matter. 2018 Jun 27;30(25):254002. doi: 10.1088/1361-648X/aac156. Epub 2018 Apr 30.

We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm. We have employed a tight-binding mode-space NEGF technique demonstrating by far...

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Afzalian A, Vasen T, Ramvall P, et al. Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations. J Phys Condens Matter. 2018;30(25):254002doi: 10.1088/1361-648X/aac156.
Afzalian, A., Vasen, T., Ramvall, P., Shen, T. M., Wu, J., & Passlack, M. (2018). Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations. Journal of physics. Condensed matter : an Institute of Physics journal, 30(25), 254002. https://doi.org/10.1088/1361-648X/aac156
Afzalian, A, et al. "Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations." Journal of physics. Condensed matter : an Institute of Physics journal vol. 30,25 (2018): 254002. doi: https://doi.org/10.1088/1361-648X/aac156
Afzalian A, Vasen T, Ramvall P, Shen TM, Wu J, Passlack M. Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations. J Phys Condens Matter. 2018 Jun 27;30(25):254002. doi: 10.1088/1361-648X/aac156. Epub 2018 Apr 30. PMID: 29708499.
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Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration.

Scientific reports

Holland M, van Dal M, Duriez B, Oxland R, Vellianitis G, Doornbos G, Afzalian A, Chen TK, Hsieh CH, Ramvall P, Vasen T, Yeo YC, Passlack M.
PMID: 29116157
Sci Rep. 2017 Nov 07;7(1):14632. doi: 10.1038/s41598-017-15025-0.

The integration of III-V semiconductors on silicon (Si) substrate has been an active field of research for more than 30 years. Various approaches have been investigated, including growth of buffer layers to accommodate the lattice mismatch between the Si...

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Holland M, van Dal M, Duriez B, et al. Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Sci Rep. 2017;7(1):14632doi: 10.1038/s41598-017-15025-0.
Holland, M., van Dal, M., Duriez, B., Oxland, R., Vellianitis, G., Doornbos, G., Afzalian, A., Chen, T. K., Hsieh, C. H., Ramvall, P., Vasen, T., Yeo, Y. C., & Passlack, M. (2017). Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Scientific reports, 7(1), 14632. https://doi.org/10.1038/s41598-017-15025-0
Holland, Martin, et al. "Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration." Scientific reports vol. 7,1 (2017): 14632. doi: https://doi.org/10.1038/s41598-017-15025-0
Holland M, van Dal M, Duriez B, Oxland R, Vellianitis G, Doornbos G, Afzalian A, Chen TK, Hsieh CH, Ramvall P, Vasen T, Yeo YC, Passlack M. Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Sci Rep. 2017 Nov 07;7(1):14632. doi: 10.1038/s41598-017-15025-0. PMID: 29116157; PMCID: PMC5676749.
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Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4).

The Journal of chemical physics

Winn DL, Hale MJ, Grassman TJ, Sexton JZ, Kummel AC, Passlack M, Droopad R.
PMID: 17919041
J Chem Phys. 2007 Oct 07;127(13):134705. doi: 10.1063/1.2786097.

A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on GaAs(001)-c(2 x 8)/(2 x 4). Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four...

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Winn DL, Hale MJ, Grassman TJ, et al. Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). J Chem Phys. 2007;127(13):134705doi: 10.1063/1.2786097.
Winn, D. L., Hale, M. J., Grassman, T. J., Sexton, J. Z., Kummel, A. C., Passlack, M., & Droopad, R. (2007). Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). The Journal of chemical physics, 127(13), 134705. https://doi.org/10.1063/1.2786097
Winn, Darby L, et al. "Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4)." The Journal of chemical physics vol. 127,13 (2007): 134705. doi: https://doi.org/10.1063/1.2786097
Winn DL, Hale MJ, Grassman TJ, Sexton JZ, Kummel AC, Passlack M, Droopad R. Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). J Chem Phys. 2007 Oct 07;127(13):134705. doi: 10.1063/1.2786097. PMID: 17919041.
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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.

Scientific reports

Vasen T, Ramvall P, Afzalian A, Doornbos G, Holland M, Thelander C, Dick KA, Wernersson L-, Passlack M.
PMID: 30655575
Sci Rep. 2019 Jan 17;9(1):202. doi: 10.1038/s41598-018-36549-z.

Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender...

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Vasen T, Ramvall P, Afzalian A, et al. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs. Sci Rep. 2019;9(1):202doi: 10.1038/s41598-018-36549-z.
Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., Thelander, C., Dick, K. A., Wernersson, L. -., & Passlack, M. (2019). Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs. Scientific reports, 9(1), 202. https://doi.org/10.1038/s41598-018-36549-z
Vasen, T, et al. "Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs." Scientific reports vol. 9,1 (2019): 202. doi: https://doi.org/10.1038/s41598-018-36549-z
Vasen T, Ramvall P, Afzalian A, Doornbos G, Holland M, Thelander C, Dick KA, Wernersson L-, Passlack M. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs. Sci Rep. 2019 Jan 17;9(1):202. doi: 10.1038/s41598-018-36549-z. PMID: 30655575; PMCID: PMC6336843.
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Showing 1 to 12 of 12 entries