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Chen J, Han Y, Kong X, et al. The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors. Angew Chem Int Ed Engl. 2016;55(44):13822-13827doi: 10.1002/anie.201605926.
Chen, J., Han, Y., Kong, X., Deng, X., Park, H. J., Guo, Y., Jin, S., Qi, Z., Lee, Z., Qiao, Z., Ruoff, R. S., & Ji, H. (2016). The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors. Angewandte Chemie (International ed. in English), 55(44), 13822-13827. https://doi.org/10.1002/anie.201605926
Chen, Jiafeng, et al. "The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors." Angewandte Chemie (International ed. in English) vol. 55,44 (2016): 13822-13827. doi: https://doi.org/10.1002/anie.201605926
Chen J, Han Y, Kong X, Deng X, Park HJ, Guo Y, Jin S, Qi Z, Lee Z, Qiao Z, Ruoff RS, Ji H. The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors. Angew Chem Int Ed Engl. 2016 Oct 24;55(44):13822-13827. doi: 10.1002/anie.201605926. Epub 2016 Oct 04. PMID: 27701817.
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