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Zhang X, Lourenço-Martins H, Meuret S, et al. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology. 2016;27(19):195704doi: 10.1088/0957-4484/27/19/195704.
Zhang, X., Lourenço-Martins, H., Meuret, S., Kociak, M., Haas, B., Rouvière, J. L., Jouneau, P. H., Bougerol, C., Auzelle, T., Jalabert, D., Biquard, X., Gayral, B., & Daudin, B. (2016). InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology, 27(19), 195704. https://doi.org/10.1088/0957-4484/27/19/195704
Zhang, Xin, et al. "InGaN nanowires with high InN molar fraction: growth, structural and optical properties." Nanotechnology vol. 27,19 (2016): 195704. doi: https://doi.org/10.1088/0957-4484/27/19/195704
Zhang X, Lourenço-Martins H, Meuret S, Kociak M, Haas B, Rouvière JL, Jouneau PH, Bougerol C, Auzelle T, Jalabert D, Biquard X, Gayral B, Daudin B. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology. 2016 May 13;27(19):195704. doi: 10.1088/0957-4484/27/19/195704. Epub 2016 Apr 04. PMID: 27041669.
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