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Fatahilah MF, Yu F, Strempel K, et al. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. Sci Rep. 2019;9(1):10301doi: 10.1038/s41598-019-46186-9.
Fatahilah, M. F., Yu, F., Strempel, K., Römer, F., Maradan, D., Meneghini, M., Bakin, A., Hohls, F., Schumacher, H. W., Witzigmann, B., Waag, A., & Wasisto, H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. Scientific reports, 9(1), 10301. https://doi.org/10.1038/s41598-019-46186-9
Fatahilah, Muhammad Fahlesa, et al. "Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics." Scientific reports vol. 9,1 (2019): 10301. doi: https://doi.org/10.1038/s41598-019-46186-9
Fatahilah MF, Yu F, Strempel K, Römer F, Maradan D, Meneghini M, Bakin A, Hohls F, Schumacher HW, Witzigmann B, Waag A, Wasisto HS. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. Sci Rep. 2019 Jul 16;9(1):10301. doi: 10.1038/s41598-019-46186-9. PMID: 31311946; PMCID: PMC6635513.
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