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Ambriz-Vargas F, Kolhatkar G, Broyer M, et al. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction. ACS Appl Mater Interfaces. 2017;9(15):13262-13268doi: 10.1021/acsami.6b16173.
Ambriz-Vargas, F., Kolhatkar, G., Broyer, M., Hadj-Youssef, A., Nouar, R., Sarkissian, A., Thomas, R., Gomez-Yáñez, C., Gauthier, M. A., & Ruediger, A. (2017). A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction. ACS applied materials & interfaces, 9(15), 13262-13268. https://doi.org/10.1021/acsami.6b16173
Ambriz-Vargas, Fabian, et al. "A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction." ACS applied materials & interfaces vol. 9,15 (2017): 13262-13268. doi: https://doi.org/10.1021/acsami.6b16173
Ambriz-Vargas F, Kolhatkar G, Broyer M, Hadj-Youssef A, Nouar R, Sarkissian A, Thomas R, Gomez-Yáñez C, Gauthier MA, Ruediger A. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction. ACS Appl Mater Interfaces. 2017 Apr 19;9(15):13262-13268. doi: 10.1021/acsami.6b16173. Epub 2017 Apr 10. PMID: 28368099.
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