Cite
Buckeridge J, Catlow CR, Scanlon DO, et al. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals. Phys Rev Lett. 2015;114(1):016405doi: 10.1103/PhysRevLett.114.016405.
Buckeridge, J., Catlow, C. R., Scanlon, D. O., Keal, T. W., Sherwood, P., Miskufova, M., Walsh, A., Woodley, S. M., & Sokol, A. A. (2015). Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals. Physical review letters, 114(1), 016405. https://doi.org/10.1103/PhysRevLett.114.016405
Buckeridge, J, et al. "Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals." Physical review letters vol. 114,1 (2015): 016405. doi: https://doi.org/10.1103/PhysRevLett.114.016405
Buckeridge J, Catlow CR, Scanlon DO, Keal TW, Sherwood P, Miskufova M, Walsh A, Woodley SM, Sokol AA. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals. Phys Rev Lett. 2015 Jan 09;114(1):016405. doi: 10.1103/PhysRevLett.114.016405. Epub 2015 Jan 07. PMID: 25615487.
Copy
Download .nbib