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Direct imaging of p-n junction in core-shell GaN wires.

Nano letters

Tchoulfian P, Donatini F, Levy F, Dussaigne A, Ferret P, Pernot J.
PMID: 24837761
Nano Lett. 2014 Jun 11;14(6):3491-8. doi: 10.1021/nl5010493. Epub 2014 May 29.

While core-shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present uncertainty about essential semiconductor properties along the three-dimensional (3D) buried p-n junction. Thanks to a cross-sectional approach, scanning electron beam...

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Tchoulfian P, Donatini F, Levy F, et al. Direct imaging of p-n junction in core-shell GaN wires. Nano Lett. 2014;14(6):3491-8doi: 10.1021/nl5010493.
Tchoulfian, P., Donatini, F., Levy, F., Dussaigne, A., Ferret, P., & Pernot, J. (2014). Direct imaging of p-n junction in core-shell GaN wires. Nano letters, 14(6), 3491-8. https://doi.org/10.1021/nl5010493
Tchoulfian, P, et al. "Direct imaging of p-n junction in core-shell GaN wires." Nano letters vol. 14,6 (2014): 3491-8. doi: https://doi.org/10.1021/nl5010493
Tchoulfian P, Donatini F, Levy F, Dussaigne A, Ferret P, Pernot J. Direct imaging of p-n junction in core-shell GaN wires. Nano Lett. 2014 Jun 11;14(6):3491-8. doi: 10.1021/nl5010493. Epub 2014 May 29. PMID: 24837761.
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Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires.

Nano letters

Donatini F, de Luna Bugallo A, Tchoulfian P, Chicot G, Sartel C, Sallet V, Pernot J.
PMID: 27105083
Nano Lett. 2016 May 11;16(5):2938-44. doi: 10.1021/acs.nanolett.5b04710. Epub 2016 Apr 29.

Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the...

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Donatini F, de Luna Bugallo A, Tchoulfian P, et al. Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires. Nano Lett. 2016;16(5):2938-44doi: 10.1021/acs.nanolett.5b04710.
Donatini, F., de Luna Bugallo, A., Tchoulfian, P., Chicot, G., Sartel, C., Sallet, V., & Pernot, J. (2016). Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires. Nano letters, 16(5), 2938-44. https://doi.org/10.1021/acs.nanolett.5b04710
Donatini, F, et al. "Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires." Nano letters vol. 16,5 (2016): 2938-44. doi: https://doi.org/10.1021/acs.nanolett.5b04710
Donatini F, de Luna Bugallo A, Tchoulfian P, Chicot G, Sartel C, Sallet V, Pernot J. Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires. Nano Lett. 2016 May 11;16(5):2938-44. doi: 10.1021/acs.nanolett.5b04710. Epub 2016 Apr 29. PMID: 27105083.
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Spectroscopic XPEEM of highly conductive SI-doped GaN wires.

Ultramicroscopy

Renault O, Morin J, Tchoulfian P, Chevalier N, Feyer V, Pernot J, Schneider CM.
PMID: 26004038
Ultramicroscopy. 2015 Dec;159:476-81. doi: 10.1016/j.ultramic.2015.05.007. Epub 2015 May 14.

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN...

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Renault O, Morin J, Tchoulfian P, et al. Spectroscopic XPEEM of highly conductive SI-doped GaN wires. Ultramicroscopy. 2015;159:476-81doi: 10.1016/j.ultramic.2015.05.007.
Renault, O., Morin, J., Tchoulfian, P., Chevalier, N., Feyer, V., Pernot, J., & Schneider, C. M. (2015). Spectroscopic XPEEM of highly conductive SI-doped GaN wires. Ultramicroscopy, 159476-81. https://doi.org/10.1016/j.ultramic.2015.05.007
Renault, O, et al. "Spectroscopic XPEEM of highly conductive SI-doped GaN wires." Ultramicroscopy vol. 159 (2015): 476-81. doi: https://doi.org/10.1016/j.ultramic.2015.05.007
Renault O, Morin J, Tchoulfian P, Chevalier N, Feyer V, Pernot J, Schneider CM. Spectroscopic XPEEM of highly conductive SI-doped GaN wires. Ultramicroscopy. 2015 Dec;159:476-81. doi: 10.1016/j.ultramic.2015.05.007. Epub 2015 May 14. PMID: 26004038.
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Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement.

Nano letters

Lassiaz T, Tchoulfian P, Donatini F, Brochet J, Parize R, Jacopin G, Pernot J.
PMID: 33825480
Nano Lett. 2021 Apr 28;21(8):3372-3378. doi: 10.1021/acs.nanolett.0c04491. Epub 2021 Apr 07.

Developing nanoscale electrical characterization techniques adapted to three-dimensional (3D) geometry is essential for optimization of the epitaxial structure and doping process of nano- and microwires. In this paper, we demonstrate the assessment of the depletion width as well as...

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Lassiaz T, Tchoulfian P, Donatini F, et al. Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement. Nano Lett. 2021;21(8):3372-3378doi: 10.1021/acs.nanolett.0c04491.
Lassiaz, T., Tchoulfian, P., Donatini, F., Brochet, J., Parize, R., Jacopin, G., & Pernot, J. (2021). Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement. Nano letters, 21(8), 3372-3378. https://doi.org/10.1021/acs.nanolett.0c04491
Lassiaz, Timothée, et al. "Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement." Nano letters vol. 21,8 (2021): 3372-3378. doi: https://doi.org/10.1021/acs.nanolett.0c04491
Lassiaz T, Tchoulfian P, Donatini F, Brochet J, Parize R, Jacopin G, Pernot J. Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement. Nano Lett. 2021 Apr 28;21(8):3372-3378. doi: 10.1021/acs.nanolett.0c04491. Epub 2021 Apr 07. PMID: 33825480.
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Showing 1 to 4 of 4 entries