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Yoon S, Tak YJ, Yoon DH, et al. Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors. ACS Appl Mater Interfaces. 2014;6(16):13496-501doi: 10.1021/am502571w.
Yoon, S., Tak, Y. J., Yoon, D. H., Choi, U. H., Park, J. S., Ahn, B. D., & Kim, H. J. (2014). Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors. ACS applied materials & interfaces, 6(16), 13496-501. https://doi.org/10.1021/am502571w
Yoon, Seokhyun, et al. "Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors." ACS applied materials & interfaces vol. 6,16 (2014): 13496-501. doi: https://doi.org/10.1021/am502571w
Yoon S, Tak YJ, Yoon DH, Choi UH, Park JS, Ahn BD, Kim HJ. Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):13496-501. doi: 10.1021/am502571w. Epub 2014 Aug 08. PMID: 25078328.
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