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Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap.

ACS applied materials & interfaces

Lee Y, Yang I, Tan HH, Jagadish C, Karuturi SK.
PMID: 32692158
ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36380-36388. doi: 10.1021/acsami.0c10370. Epub 2020 Jul 31.

InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are...

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Lee Y, Yang I, Tan HH, et al. Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap. ACS Appl Mater Interfaces. 2020;12(32):36380-36388doi: 10.1021/acsami.0c10370.
Lee, Y., Yang, I., Tan, H. H., Jagadish, C., & Karuturi, S. K. (2020). Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap. ACS applied materials & interfaces, 12(32), 36380-36388. https://doi.org/10.1021/acsami.0c10370
Lee, Yonghwan, et al. "Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap." ACS applied materials & interfaces vol. 12,32 (2020): 36380-36388. doi: https://doi.org/10.1021/acsami.0c10370
Lee Y, Yang I, Tan HH, Jagadish C, Karuturi SK. Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap. ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36380-36388. doi: 10.1021/acsami.0c10370. Epub 2020 Jul 31. PMID: 32692158.
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High-Performance Hybrid InP QDs/Black Phosphorus Photodetector.

ACS applied materials & interfaces

Kwak DH, Ramasamy P, Lee YS, Jeong MH, Lee JS.
PMID: 31322342
ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29041-29046. doi: 10.1021/acsami.9b07910. Epub 2019 Jul 31.

Zero-dimensional-two-dimensional (0D-2D) hybrid optoelectronic devices have demonstrated high sensitivity and high performance due to the high absorption coefficient of 0D materials with a tunable detection range and a high carrier transport property of 2D materials. However, the reported 0D-2D...

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Kwak DH, Ramasamy P, Lee YS, et al. High-Performance Hybrid InP QDs/Black Phosphorus Photodetector. ACS Appl Mater Interfaces. 2019;11(32):29041-29046doi: 10.1021/acsami.9b07910.
Kwak, D. H., Ramasamy, P., Lee, Y. S., Jeong, M. H., & Lee, J. S. (2019). High-Performance Hybrid InP QDs/Black Phosphorus Photodetector. ACS applied materials & interfaces, 11(32), 29041-29046. https://doi.org/10.1021/acsami.9b07910
Kwak, Do-Hyun, et al. "High-Performance Hybrid InP QDs/Black Phosphorus Photodetector." ACS applied materials & interfaces vol. 11,32 (2019): 29041-29046. doi: https://doi.org/10.1021/acsami.9b07910
Kwak DH, Ramasamy P, Lee YS, Jeong MH, Lee JS. High-Performance Hybrid InP QDs/Black Phosphorus Photodetector. ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29041-29046. doi: 10.1021/acsami.9b07910. Epub 2019 Jul 31. PMID: 31322342.
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Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer.

Small (Weinheim an der Bergstrasse, Germany)

Lee T, Hahm D, Kim K, Bae WK, Lee C, Kwak J.
PMID: 31729177
Small. 2019 Dec;15(50):e1905162. doi: 10.1002/smll.201905162. Epub 2019 Nov 14.

InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the...

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Lee T, Hahm D, Kim K, et al. Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer. Small. 2019;15(50):e1905162doi: 10.1002/smll.201905162.
Lee, T., Hahm, D., Kim, K., Bae, W. K., Lee, C., & Kwak, J. (2019). Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer. Small (Weinheim an der Bergstrasse, Germany), 15(50), e1905162. https://doi.org/10.1002/smll.201905162
Lee, Taesoo, et al. "Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer." Small (Weinheim an der Bergstrasse, Germany) vol. 15,50 (2019): e1905162. doi: https://doi.org/10.1002/smll.201905162
Lee T, Hahm D, Kim K, Bae WK, Lee C, Kwak J. Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer. Small. 2019 Dec;15(50):e1905162. doi: 10.1002/smll.201905162. Epub 2019 Nov 14. PMID: 31729177.
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Towards Interband Cascade lasers on InP Substrate.

Materials (Basel, Switzerland)

Ryczko K, Andrzejewski J, Sęk G.
PMID: 35009205
Materials (Basel). 2021 Dec 22;15(1). doi: 10.3390/ma15010060.

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as...

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Ryczko K, Andrzejewski J, Sęk G. Towards Interband Cascade lasers on InP Substrate. Materials (Basel). 2021;15(1)doi: 10.3390/ma15010060.
Ryczko, K., Andrzejewski, J., & Sęk, G. (2021). Towards Interband Cascade lasers on InP Substrate. Materials (Basel, Switzerland), 15(1), . https://doi.org/10.3390/ma15010060
Ryczko, Krzysztof, et al. "Towards Interband Cascade lasers on InP Substrate." Materials (Basel, Switzerland) vol. 15,1 (2021). doi: https://doi.org/10.3390/ma15010060
Ryczko K, Andrzejewski J, Sęk G. Towards Interband Cascade lasers on InP Substrate. Materials (Basel). 2021 Dec 22;15(1). doi: 10.3390/ma15010060. PMID: 35009205; PMCID: PMC8746262.
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A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor.

Advanced materials (Deerfield Beach, Fla.)

Valleix R, Zhang Q, Boyer D, Boutinaud P, Chadeyron G, Feng Y, Okuno H, Réveret F, Hintze-Bruening H, Leroux F.
PMID: 34339063
Adv Mater. 2021 Sep;33(38):e2103411. doi: 10.1002/adma.202103411. Epub 2021 Aug 02.

The architecture of Zn-Al layered double hydroxides (LDHs), organo-modified with bola-amphiphiles molecules, is matching its interlayer space to the size of narrow-band red-emitting InP/ZnS core-shell quantum dots (QDs) to form original high-performance functional organic-inorganic QD-bola-LDH hybrids. The success of...

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Valleix R, Zhang Q, Boyer D, et al. A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor. Adv Mater. 2021;33(38):e2103411doi: 10.1002/adma.202103411.
Valleix, R., Zhang, Q., Boyer, D., Boutinaud, P., Chadeyron, G., Feng, Y., Okuno, H., Réveret, F., Hintze-Bruening, H., & Leroux, F. (2021). A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor. Advanced materials (Deerfield Beach, Fla.), 33(38), e2103411. https://doi.org/10.1002/adma.202103411
Valleix, Rodolphe, et al. "A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor." Advanced materials (Deerfield Beach, Fla.) vol. 33,38 (2021): e2103411. doi: https://doi.org/10.1002/adma.202103411
Valleix R, Zhang Q, Boyer D, Boutinaud P, Chadeyron G, Feng Y, Okuno H, Réveret F, Hintze-Bruening H, Leroux F. A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor. Adv Mater. 2021 Sep;33(38):e2103411. doi: 10.1002/adma.202103411. Epub 2021 Aug 02. PMID: 34339063.
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Towards Interband Cascade lasers on InP Substrate.

Materials (Basel, Switzerland)

Ryczko K, Andrzejewski J, Sęk G.
PMID: 35009205
Materials (Basel). 2021 Dec 22;15(1). doi: 10.3390/ma15010060.

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as...

Cite
Ryczko K, Andrzejewski J, Sęk G. Towards Interband Cascade lasers on InP Substrate. Materials (Basel). 2021;15(1)doi: 10.3390/ma15010060.
Ryczko, K., Andrzejewski, J., & Sęk, G. (2021). Towards Interband Cascade lasers on InP Substrate. Materials (Basel, Switzerland), 15(1), . https://doi.org/10.3390/ma15010060
Ryczko, Krzysztof, et al. "Towards Interband Cascade lasers on InP Substrate." Materials (Basel, Switzerland) vol. 15,1 (2021). doi: https://doi.org/10.3390/ma15010060
Ryczko K, Andrzejewski J, Sęk G. Towards Interband Cascade lasers on InP Substrate. Materials (Basel). 2021 Dec 22;15(1). doi: 10.3390/ma15010060. PMID: 35009205.
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Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals.

ACS applied materials & interfaces

Xi L, Cho DY, Duchamp M, Boothroyd CB, Lek JY, Besmehn A, Waser R, Lam YM, Kardynal B.
PMID: 25252171
ACS Appl Mater Interfaces. 2014 Oct 22;6(20):18233-42. doi: 10.1021/am504988j. Epub 2014 Oct 09.

Environmentally friendly nanocrystals (NCs) such as InP are in demand for various applications, such as biomedical labeling, solar cells, sensors, and light-emitting diodes (LEDs). To fulfill their potential applications, the synthesis of such high-quality "green" InP NCs required further...

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Xi L, Cho DY, Duchamp M, et al. Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals. ACS Appl Mater Interfaces. 2014;6(20):18233-42doi: 10.1021/am504988j.
Xi, L., Cho, D. Y., Duchamp, M., Boothroyd, C. B., Lek, J. Y., Besmehn, A., Waser, R., Lam, Y. M., & Kardynal, B. (2014). Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals. ACS applied materials & interfaces, 6(20), 18233-42. https://doi.org/10.1021/am504988j
Xi, Lifei, et al. "Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals." ACS applied materials & interfaces vol. 6,20 (2014): 18233-42. doi: https://doi.org/10.1021/am504988j
Xi L, Cho DY, Duchamp M, Boothroyd CB, Lek JY, Besmehn A, Waser R, Lam YM, Kardynal B. Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals. ACS Appl Mater Interfaces. 2014 Oct 22;6(20):18233-42. doi: 10.1021/am504988j. Epub 2014 Oct 09. PMID: 25252171.
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In situ characterization of nanowire dimensions and growth dynamics by optical reflectance.

Nano letters

Heurlin M, Anttu N, Camus C, Samuelson L, Borgström MT.
PMID: 25806466
Nano Lett. 2015 May 13;15(5):3597-602. doi: 10.1021/acs.nanolett.5b01107. Epub 2015 Apr 02.

Optical reflectometry is commonly used as an accurate and noninvasive characterization tool when growing planar semiconductor layers. However, thin-film analysis schemes cannot be directly applied to nanowire systems due to their complex optical response. Here, we report on reliable...

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Heurlin M, Anttu N, Camus C, et al. In situ characterization of nanowire dimensions and growth dynamics by optical reflectance. Nano Lett. 2015;15(5):3597-602doi: 10.1021/acs.nanolett.5b01107.
Heurlin, M., Anttu, N., Camus, C., Samuelson, L., & Borgström, M. T. (2015). In situ characterization of nanowire dimensions and growth dynamics by optical reflectance. Nano letters, 15(5), 3597-602. https://doi.org/10.1021/acs.nanolett.5b01107
Heurlin, Magnus, et al. "In situ characterization of nanowire dimensions and growth dynamics by optical reflectance." Nano letters vol. 15,5 (2015): 3597-602. doi: https://doi.org/10.1021/acs.nanolett.5b01107
Heurlin M, Anttu N, Camus C, Samuelson L, Borgström MT. In situ characterization of nanowire dimensions and growth dynamics by optical reflectance. Nano Lett. 2015 May 13;15(5):3597-602. doi: 10.1021/acs.nanolett.5b01107. Epub 2015 Apr 02. PMID: 25806466.
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Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al.

Nano letters

Black LE, Cavalli A, Verheijen MA, Haverkort JEM, Bakkers EPAM, Kessels WMM.
PMID: 28885032
Nano Lett. 2017 Oct 11;17(10):6287-6294. doi: 10.1021/acs.nanolett.7b02972. Epub 2017 Sep 11.

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP...

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Black LE, Cavalli A, Verheijen MA, et al. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al. Nano Lett. 2017;17(10):6287-6294doi: 10.1021/acs.nanolett.7b02972.
Black, L. E., Cavalli, A., Verheijen, M. A., Haverkort, J. E. M., Bakkers, E. P. A. M., & Kessels, W. M. M. (2017). Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al. Nano letters, 17(10), 6287-6294. https://doi.org/10.1021/acs.nanolett.7b02972
Black, L E, et al. "Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al." Nano letters vol. 17,10 (2017): 6287-6294. doi: https://doi.org/10.1021/acs.nanolett.7b02972
Black LE, Cavalli A, Verheijen MA, Haverkort JEM, Bakkers EPAM, Kessels WMM. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al. Nano Lett. 2017 Oct 11;17(10):6287-6294. doi: 10.1021/acs.nanolett.7b02972. Epub 2017 Sep 11. PMID: 28885032; PMCID: PMC5642000.
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Templated Growth of InP Nanocrystals with a Polytwistane Structure.

Angewandte Chemie (International ed. in English)

Ritchhart A, Cossairt BM.
PMID: 29316053
Angew Chem Int Ed Engl. 2018 Feb 12;57(7):1908-1912. doi: 10.1002/anie.201711539. Epub 2018 Jan 24.

We have synthesized InP nanocrystals of an unprecedented crystal phase at low temperature (35-100 °C) by templated growth of InP magic-sized clusters. With the addition of stoichiometric equivalents of P(SiMe

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Ritchhart A, Cossairt BM. Templated Growth of InP Nanocrystals with a Polytwistane Structure. Angew Chem Int Ed Engl. 2018;57(7):1908-1912doi: 10.1002/anie.201711539.
Ritchhart, A., & Cossairt, B. M. (2018). Templated Growth of InP Nanocrystals with a Polytwistane Structure. Angewandte Chemie (International ed. in English), 57(7), 1908-1912. https://doi.org/10.1002/anie.201711539
Ritchhart, Andrew, and Cossairt, Brandi M. "Templated Growth of InP Nanocrystals with a Polytwistane Structure." Angewandte Chemie (International ed. in English) vol. 57,7 (2018): 1908-1912. doi: https://doi.org/10.1002/anie.201711539
Ritchhart A, Cossairt BM. Templated Growth of InP Nanocrystals with a Polytwistane Structure. Angew Chem Int Ed Engl. 2018 Feb 12;57(7):1908-1912. doi: 10.1002/anie.201711539. Epub 2018 Jan 24. PMID: 29316053.
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Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots.

Nano letters

Reid KR, McBride JR, Freymeyer NJ, Thal LB, Rosenthal SJ.
PMID: 29282985
Nano Lett. 2018 Feb 14;18(2):709-716. doi: 10.1021/acs.nanolett.7b03703. Epub 2018 Jan 02.

Thick-shell (>5 nm) InP-ZnSe colloidal quantum dots (QDs) grown by a continuous-injection shell growth process are reported. The growth of a thick crystalline shell is attributed to the high temperature of the growth process and the relatively low lattice...

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Reid KR, McBride JR, Freymeyer NJ, et al. Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots. Nano Lett. 2018;18(2):709-716doi: 10.1021/acs.nanolett.7b03703.
Reid, K. R., McBride, J. R., Freymeyer, N. J., Thal, L. B., & Rosenthal, S. J. (2018). Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots. Nano letters, 18(2), 709-716. https://doi.org/10.1021/acs.nanolett.7b03703
Reid, Kemar R, et al. "Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots." Nano letters vol. 18,2 (2018): 709-716. doi: https://doi.org/10.1021/acs.nanolett.7b03703
Reid KR, McBride JR, Freymeyer NJ, Thal LB, Rosenthal SJ. Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots. Nano Lett. 2018 Feb 14;18(2):709-716. doi: 10.1021/acs.nanolett.7b03703. Epub 2018 Jan 02. PMID: 29282985; PMCID: PMC6163126.
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Al.

ACS applied materials & interfaces

Kang HK, Kang YS, Kim DK, Baik M, Song JD, An Y, Kim H, Cho MH.
PMID: 28387121
ACS Appl Mater Interfaces. 2017 May 24;9(20):17526-17535. doi: 10.1021/acsami.7b00099. Epub 2017 May 15.

The passivation effect of an Al

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Kang HK, Kang YS, Kim DK, et al. Al. ACS Appl Mater Interfaces. 2017;9(20):17526-17535doi: 10.1021/acsami.7b00099.
Kang, H. K., Kang, Y. S., Kim, D. K., Baik, M., Song, J. D., An, Y., Kim, H., & Cho, M. H. (2017). Al. ACS applied materials & interfaces, 9(20), 17526-17535. https://doi.org/10.1021/acsami.7b00099
Kang, Hang-Kyu, et al. "Al." ACS applied materials & interfaces vol. 9,20 (2017): 17526-17535. doi: https://doi.org/10.1021/acsami.7b00099
Kang HK, Kang YS, Kim DK, Baik M, Song JD, An Y, Kim H, Cho MH. Al. ACS Appl Mater Interfaces. 2017 May 24;9(20):17526-17535. doi: 10.1021/acsami.7b00099. Epub 2017 May 15. PMID: 28387121.
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Showing 1 to 12 of 195 entries