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Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots.

Chemical science

Devatha G, Roy S, Rao A, Mallick A, Basu S, Pillai PP.
PMID: 28626557
Chem Sci. 2017 May 01;8(5):3879-3884. doi: 10.1039/c7sc00592j. Epub 2017 Mar 13.

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of...

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Devatha G, Roy S, Rao A, et al. Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots. Chem Sci. 2017;8(5):3879-3884doi: 10.1039/c7sc00592j.
Devatha, G., Roy, S., Rao, A., Mallick, A., Basu, S., & Pillai, P. P. (2017). Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots. Chemical science, 8(5), 3879-3884. https://doi.org/10.1039/c7sc00592j
Devatha, Gayathri, et al. "Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots." Chemical science vol. 8,5 (2017): 3879-3884. doi: https://doi.org/10.1039/c7sc00592j
Devatha G, Roy S, Rao A, Mallick A, Basu S, Pillai PP. Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots. Chem Sci. 2017 May 01;8(5):3879-3884. doi: 10.1039/c7sc00592j. Epub 2017 Mar 13. PMID: 28626557; PMCID: PMC5465571.
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Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell.

Nano letters

Ko WS, Tran TT, Bhattacharya I, Ng KW, Sun H, Chang-Hasnain C.
PMID: 26083622
Nano Lett. 2015 Aug 12;15(8):4961-7. doi: 10.1021/acs.nanolett.5b00756. Epub 2015 Jul 01.

Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitive response. The photovoltaic employs a novel...

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Ko WS, Tran TT, Bhattacharya I, et al. Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell. Nano Lett. 2015;15(8):4961-7doi: 10.1021/acs.nanolett.5b00756.
Ko, W. S., Tran, T. T., Bhattacharya, I., Ng, K. W., Sun, H., & Chang-Hasnain, C. (2015). Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell. Nano letters, 15(8), 4961-7. https://doi.org/10.1021/acs.nanolett.5b00756
Ko, Wai Son, et al. "Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell." Nano letters vol. 15,8 (2015): 4961-7. doi: https://doi.org/10.1021/acs.nanolett.5b00756
Ko WS, Tran TT, Bhattacharya I, Ng KW, Sun H, Chang-Hasnain C. Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell. Nano Lett. 2015 Aug 12;15(8):4961-7. doi: 10.1021/acs.nanolett.5b00756. Epub 2015 Jul 01. PMID: 26083622.
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Semiconductor interfacial carrier dynamics via photoinduced electric fields.

Science (New York, N.Y.)

Yang Y, Gu J, Young JL, Miller EM, Turner JA, Neale NR, Beard MC.
PMID: 26612947
Science. 2015 Nov 27;350(6264):1061-5. doi: 10.1126/science.aad3459.

Solar photoconversion in semiconductors is driven by charge separation at the interface of the semiconductor and contacting layers. Here we demonstrate that time-resolved photoinduced reflectance from a semiconductor captures interfacial carrier dynamics. We applied this transient photoreflectance method to...

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Yang Y, Gu J, Young JL, et al. Semiconductor interfacial carrier dynamics via photoinduced electric fields. Science. 2015;350(6264):1061-5doi: 10.1126/science.aad3459.
Yang, Y., Gu, J., Young, J. L., Miller, E. M., Turner, J. A., Neale, N. R., & Beard, M. C. (2015). Semiconductor interfacial carrier dynamics via photoinduced electric fields. Science (New York, N.Y.), 350(6264), 1061-5. https://doi.org/10.1126/science.aad3459
Yang, Ye, et al. "Semiconductor interfacial carrier dynamics via photoinduced electric fields." Science (New York, N.Y.) vol. 350,6264 (2015): 1061-5. doi: https://doi.org/10.1126/science.aad3459
Yang Y, Gu J, Young JL, Miller EM, Turner JA, Neale NR, Beard MC. Semiconductor interfacial carrier dynamics via photoinduced electric fields. Science. 2015 Nov 27;350(6264):1061-5. doi: 10.1126/science.aad3459. PMID: 26612947.
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High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

Nano letters

Cavalli A, Wang J, Esmaeil Zadeh I, Reimer ME, Verheijen MA, Soini M, Plissard SR, Zwiller V, Haverkort JE, Bakkers EP.
PMID: 27045232
Nano Lett. 2016 May 11;16(5):3071-7. doi: 10.1021/acs.nanolett.6b00203. Epub 2016 Apr 12.

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to...

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Cavalli A, Wang J, Esmaeil Zadeh I, et al. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano Lett. 2016;16(5):3071-7doi: 10.1021/acs.nanolett.6b00203.
Cavalli, A., Wang, J., Esmaeil Zadeh, I., Reimer, M. E., Verheijen, M. A., Soini, M., Plissard, S. R., Zwiller, V., Haverkort, J. E., & Bakkers, E. P. (2016). High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano letters, 16(5), 3071-7. https://doi.org/10.1021/acs.nanolett.6b00203
Cavalli, Alessandro, et al. "High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires." Nano letters vol. 16,5 (2016): 3071-7. doi: https://doi.org/10.1021/acs.nanolett.6b00203
Cavalli A, Wang J, Esmaeil Zadeh I, Reimer ME, Verheijen MA, Soini M, Plissard SR, Zwiller V, Haverkort JE, Bakkers EP. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano Lett. 2016 May 11;16(5):3071-7. doi: 10.1021/acs.nanolett.6b00203. Epub 2016 Apr 12. PMID: 27045232.
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Carrier Recombination Processes in Gallium Indium Phosphide Nanowires.

Nano letters

Zhang W, Zeng X, Su X, Zou X, Mante PA, Borgström MT, Yartsev A.
PMID: 28654299
Nano Lett. 2017 Jul 12;17(7):4248-4254. doi: 10.1021/acs.nanolett.7b01159. Epub 2017 Jun 30.

Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in Ga

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Zhang W, Zeng X, Su X, et al. Carrier Recombination Processes in Gallium Indium Phosphide Nanowires. Nano Lett. 2017;17(7):4248-4254doi: 10.1021/acs.nanolett.7b01159.
Zhang, W., Zeng, X., Su, X., Zou, X., Mante, P. A., Borgström, M. T., & Yartsev, A. (2017). Carrier Recombination Processes in Gallium Indium Phosphide Nanowires. Nano letters, 17(7), 4248-4254. https://doi.org/10.1021/acs.nanolett.7b01159
Zhang, Wei, et al. "Carrier Recombination Processes in Gallium Indium Phosphide Nanowires." Nano letters vol. 17,7 (2017): 4248-4254. doi: https://doi.org/10.1021/acs.nanolett.7b01159
Zhang W, Zeng X, Su X, Zou X, Mante PA, Borgström MT, Yartsev A. Carrier Recombination Processes in Gallium Indium Phosphide Nanowires. Nano Lett. 2017 Jul 12;17(7):4248-4254. doi: 10.1021/acs.nanolett.7b01159. Epub 2017 Jun 30. PMID: 28654299.
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Characterization of Indium Phosphide Quantum Dot Growth Intermediates Using MALDI-TOF Mass Spectrometry.

Journal of the American Chemical Society

Xie L, Shen Y, Franke D, Sebastián V, Bawendi MG, Jensen KF.
PMID: 27690411
J Am Chem Soc. 2016 Oct 19;138(41):13469-13472. doi: 10.1021/jacs.6b06468. Epub 2016 Oct 06.

Clusters have been identified as important growth intermediates during group III-V quantum dot (QD) formation. Here we report a one-solvent protocol that integrates synthesis, purification, and mass characterization of indium phosphide (InP) QD growth mixtures. The use of matrix-assisted...

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Xie L, Shen Y, Franke D, et al. Characterization of Indium Phosphide Quantum Dot Growth Intermediates Using MALDI-TOF Mass Spectrometry. J Am Chem Soc. 2016;138(41):13469-13472doi: 10.1021/jacs.6b06468.
Xie, L., Shen, Y., Franke, D., Sebastián, V., Bawendi, M. G., & Jensen, K. F. (2016). Characterization of Indium Phosphide Quantum Dot Growth Intermediates Using MALDI-TOF Mass Spectrometry. Journal of the American Chemical Society, 138(41), 13469-13472. https://doi.org/10.1021/jacs.6b06468
Xie, Lisi, et al. "Characterization of Indium Phosphide Quantum Dot Growth Intermediates Using MALDI-TOF Mass Spectrometry." Journal of the American Chemical Society vol. 138,41 (2016): 13469-13472. doi: https://doi.org/10.1021/jacs.6b06468
Xie L, Shen Y, Franke D, Sebastián V, Bawendi MG, Jensen KF. Characterization of Indium Phosphide Quantum Dot Growth Intermediates Using MALDI-TOF Mass Spectrometry. J Am Chem Soc. 2016 Oct 19;138(41):13469-13472. doi: 10.1021/jacs.6b06468. Epub 2016 Oct 06. PMID: 27690411.
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Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting.

ACS applied materials & interfaces

Chandrasekaran S, Macdonald TJ, Gerson AR, Nann T, Voelcker NH.
PMID: 26192101
ACS Appl Mater Interfaces. 2015 Aug 12;7(31):17381-7. doi: 10.1021/acsami.5b04640. Epub 2015 Jul 30.

An effective solar-powered silicon device for hydrogen production from water splitting is a priority in light of diminishing fossil fuel vectors. There is increasing demand for nanostructuring in silicon to improve its antireflective properties for efficient solar energy conversion....

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Chandrasekaran S, Macdonald TJ, Gerson AR, et al. Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting. ACS Appl Mater Interfaces. 2015;7(31):17381-7doi: 10.1021/acsami.5b04640.
Chandrasekaran, S., Macdonald, T. J., Gerson, A. R., Nann, T., & Voelcker, N. H. (2015). Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting. ACS applied materials & interfaces, 7(31), 17381-7. https://doi.org/10.1021/acsami.5b04640
Chandrasekaran, Soundarrajan, et al. "Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting." ACS applied materials & interfaces vol. 7,31 (2015): 17381-7. doi: https://doi.org/10.1021/acsami.5b04640
Chandrasekaran S, Macdonald TJ, Gerson AR, Nann T, Voelcker NH. Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting. ACS Appl Mater Interfaces. 2015 Aug 12;7(31):17381-7. doi: 10.1021/acsami.5b04640. Epub 2015 Jul 30. PMID: 26192101.
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices.

Nature

Duan X, Huang Y, Cui Y, Wang J, Lieber CM.
PMID: 11343112
Nature. 2001 Jan 04;409(6816):66-9. doi: 10.1038/35051047.

Nanowires and nanotubes carry charge and excitons efficiently, and are therefore potentially ideal building blocks for nanoscale electronics and optoelectronics. Carbon nanotubes have already been exploited in devices such as field-effect and single-electron transistors, but the practical utility of...

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Duan X, Huang Y, Cui Y, et al. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature. 2001;409(6816):66-9doi: 10.1038/35051047.
Duan, X., Huang, Y., Cui, Y., Wang, J., & Lieber, C. M. (2001). Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature, 409(6816), 66-9. https://doi.org/10.1038/35051047
Duan, X, et al. "Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices." Nature vol. 409,6816 (2001): 66-9. doi: https://doi.org/10.1038/35051047
Duan X, Huang Y, Cui Y, Wang J, Lieber CM. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature. 2001 Jan 04;409(6816):66-9. doi: 10.1038/35051047. PMID: 11343112.
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Flux growth and structure of two compounds with the EuIn2P2 structure type, AIn2P2 (A = Ca and Sr), and a new structure type, BaIn2P2.

Acta crystallographica. Section C, Crystal structure communications

Rauscher JF, Condron CL, Beault T, Kauzlarich SM, Jensen N, Klavins P, MaQuilon S, Fisk Z, Olmstead MM.
PMID: 19805864
Acta Crystallogr C. 2009 Oct;65:i69-73. doi: 10.1107/S0108270109035987. Epub 2009 Sep 30.

Single crystals of the new Zintl phases AIn2P2 [A = Ca (calcium indium phosphide), Sr (strontium indium phosphide) and Ba (barium indium phosphide)] have been synthesized from a reactive indium flux. CaIn2P2 and SrIn2P2 are isostructural with EuIn2P2 and...

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Rauscher JF, Condron CL, Beault T, et al. Flux growth and structure of two compounds with the EuIn2P2 structure type, AIn2P2 (A = Ca and Sr), and a new structure type, BaIn2P2. Acta Crystallogr C. 2009;65:i69-73doi: 10.1107/S0108270109035987.
Rauscher, J. F., Condron, C. L., Beault, T., Kauzlarich, S. M., Jensen, N., Klavins, P., MaQuilon, S., Fisk, Z., & Olmstead, M. M. (2009). Flux growth and structure of two compounds with the EuIn2P2 structure type, AIn2P2 (A = Ca and Sr), and a new structure type, BaIn2P2. Acta crystallographica. Section C, Crystal structure communications, 65i69-73. https://doi.org/10.1107/S0108270109035987
Rauscher, Japheth F, et al. "Flux growth and structure of two compounds with the EuIn2P2 structure type, AIn2P2 (A = Ca and Sr), and a new structure type, BaIn2P2." Acta crystallographica. Section C, Crystal structure communications vol. 65 (2009): i69-73. doi: https://doi.org/10.1107/S0108270109035987
Rauscher JF, Condron CL, Beault T, Kauzlarich SM, Jensen N, Klavins P, MaQuilon S, Fisk Z, Olmstead MM. Flux growth and structure of two compounds with the EuIn2P2 structure type, AIn2P2 (A = Ca and Sr), and a new structure type, BaIn2P2. Acta Crystallogr C. 2009 Oct;65:i69-73. doi: 10.1107/S0108270109035987. Epub 2009 Sep 30. PMID: 19805864.
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Spectroscopic properties of colloidal indium phosphide quantum wires.

Journal of the American Chemical Society

Wang F, Yu H, Li J, Hang Q, Zemlyanov D, Gibbons PC, Wang LW, Janes DB, Buhro WE.
PMID: 17967012
J Am Chem Soc. 2007 Nov 21;129(46):14327-35. doi: 10.1021/ja074049h. Epub 2007 Oct 30.

Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra,...

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Wang F, Yu H, Li J, et al. Spectroscopic properties of colloidal indium phosphide quantum wires. J Am Chem Soc. 2007;129(46):14327-35doi: 10.1021/ja074049h.
Wang, F., Yu, H., Li, J., Hang, Q., Zemlyanov, D., Gibbons, P. C., Wang, L. W., Janes, D. B., & Buhro, W. E. (2007). Spectroscopic properties of colloidal indium phosphide quantum wires. Journal of the American Chemical Society, 129(46), 14327-35. https://doi.org/10.1021/ja074049h
Wang, Fudong, et al. "Spectroscopic properties of colloidal indium phosphide quantum wires." Journal of the American Chemical Society vol. 129,46 (2007): 14327-35. doi: https://doi.org/10.1021/ja074049h
Wang F, Yu H, Li J, Hang Q, Zemlyanov D, Gibbons PC, Wang LW, Janes DB, Buhro WE. Spectroscopic properties of colloidal indium phosphide quantum wires. J Am Chem Soc. 2007 Nov 21;129(46):14327-35. doi: 10.1021/ja074049h. Epub 2007 Oct 30. PMID: 17967012.
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Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe.

Optics letters

Chauvet M, Hawkins SA, Salamo GJ, Segev M, Bliss DF, Bryant G.
PMID: 19876343
Opt Lett. 1996 Sep 01;21(17):1333-5. doi: 10.1364/ol.21.001333.

We demonstrate what we believe to be the first experimental observation of self-trapping and self-deflection of a planar optical beam by the photorefractive effect in a semiconductor. The semiconductor material is indium phosphide doped with iron. We show that...

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Chauvet M, Hawkins SA, Salamo GJ, et al. Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe. Opt Lett. 1996;21(17):1333-5doi: 10.1364/ol.21.001333.
Chauvet, M., Hawkins, S. A., Salamo, G. J., Segev, M., Bliss, D. F., & Bryant, G. (1996). Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe. Optics letters, 21(17), 1333-5. https://doi.org/10.1364/ol.21.001333
Chauvet, M, et al. "Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe." Optics letters vol. 21,17 (1996): 1333-5. doi: https://doi.org/10.1364/ol.21.001333
Chauvet M, Hawkins SA, Salamo GJ, Segev M, Bliss DF, Bryant G. Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe. Opt Lett. 1996 Sep 01;21(17):1333-5. doi: 10.1364/ol.21.001333. PMID: 19876343.
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Optical properties of indium phosphide nanowire ensembles at various temperatures.

Nanotechnology

Lohn AJ, Onishi T, Kobayashi NP.
PMID: 20689159
Nanotechnology. 2010 Sep 03;21(35):355702. doi: 10.1088/0957-4484/21/35/355702. Epub 2010 Aug 06.

Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects...

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Lohn AJ, Onishi T, Kobayashi NP. Optical properties of indium phosphide nanowire ensembles at various temperatures. Nanotechnology. 2010;21(35):355702doi: 10.1088/0957-4484/21/35/355702.
Lohn, A. J., Onishi, T., & Kobayashi, N. P. (2010). Optical properties of indium phosphide nanowire ensembles at various temperatures. Nanotechnology, 21(35), 355702. https://doi.org/10.1088/0957-4484/21/35/355702
Lohn, Andrew J, et al. "Optical properties of indium phosphide nanowire ensembles at various temperatures." Nanotechnology vol. 21,35 (2010): 355702. doi: https://doi.org/10.1088/0957-4484/21/35/355702
Lohn AJ, Onishi T, Kobayashi NP. Optical properties of indium phosphide nanowire ensembles at various temperatures. Nanotechnology. 2010 Sep 03;21(35):355702. doi: 10.1088/0957-4484/21/35/355702. Epub 2010 Aug 06. PMID: 20689159.
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Showing 1 to 12 of 195 entries