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Jang HJ, Appelbaum I. Spin polarized electron transport near the Si/SiO2 interface. Phys Rev Lett. 2009;103(11):117202doi: 10.1103/PhysRevLett.103.117202.
Jang, H. J., & Appelbaum, I. (2009). Spin polarized electron transport near the Si/SiO2 interface. Physical review letters, 103(11), 117202. https://doi.org/10.1103/PhysRevLett.103.117202
Jang, Hyuk-Jae, and Appelbaum, Ian. "Spin polarized electron transport near the Si/SiO2 interface." Physical review letters vol. 103,11 (2009): 117202. doi: https://doi.org/10.1103/PhysRevLett.103.117202
Jang HJ, Appelbaum I. Spin polarized electron transport near the Si/SiO2 interface. Phys Rev Lett. 2009 Sep 11;103(11):117202. doi: 10.1103/PhysRevLett.103.117202. Epub 2009 Sep 11. PMID: 19792397.
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Phys Rev Lett. 2009 Sep 11;103(11):117202. doi: 10.1103/PhysRevLett.103.117202. Epub 2009 Sep 11.

Spin polarized electron transport near the Si/SiO2 interface.

Physical review letters

Hyuk-Jae Jang, Ian Appelbaum

Affiliations

  1. Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742 USA.

PMID: 19792397 DOI: 10.1103/PhysRevLett.103.117202

Abstract

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO(2)) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60 K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. This behavior, which is in contrast with the expected exponential depolarization seen in bulk transport devices, is explained using a transform method to recover the empirical spin current transit-time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin depolarization (reducing the spin lifetime by over 2 orders of magnitude from its bulk transport value) as the consistent cause of these phenomena.

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