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Moselund KE, Ghoneim H, Schmid H, et al. Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors. Nanotechnology. 2010;21(43):435202doi: 10.1088/0957-4484/21/43/435202.
Moselund, K. E., Ghoneim, H., Schmid, H., Björk, M. T., Lörtscher, E., Karg, S., Signorello, G., Webb, D., Tschudy, M., Beyeler, R., & Riel, H. (2010). Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors. Nanotechnology, 21(43), 435202. https://doi.org/10.1088/0957-4484/21/43/435202
Moselund, K E, et al. "Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors." Nanotechnology vol. 21,43 (2010): 435202. doi: https://doi.org/10.1088/0957-4484/21/43/435202
Moselund KE, Ghoneim H, Schmid H, Björk MT, Lörtscher E, Karg S, Signorello G, Webb D, Tschudy M, Beyeler R, Riel H. Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors. Nanotechnology. 2010 Oct 29;21(43):435202. doi: 10.1088/0957-4484/21/43/435202. Epub 2010 Oct 04. PMID: 20890021.
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Nanotechnology. 2010 Oct 29;21(43):435202. doi: 10.1088/0957-4484/21/43/435202. Epub 2010 Oct 04.

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors.

Nanotechnology

K E Moselund, H Ghoneim, H Schmid, M T Björk, E Lörtscher, S Karg, G Signorello, D Webb, M Tschudy, R Beyeler, H Riel

Affiliations

  1. IBM Research-Zurich, Rüschlikon, Switzerland. [email protected]

PMID: 20890021 DOI: 10.1088/0957-4484/21/43/435202

Abstract

In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10(20) cm(-3), and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 °C) can be used to adjust the actual doping concentration in the range 2 × 10(18) to 10(20) cm(-3). Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I(on)/I(off) ratios of around 10(7) and, especially for the PMOS, good saturation behavior and low hysteresis.

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