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Motayed A, Bonevich JE, Krylyuk S, et al. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011;22(7):075206doi: 10.1088/0957-4484/22/7/075206.
Motayed, A., Bonevich, J. E., Krylyuk, S., Davydov, A. V., Aluri, G., & Rao, M. V. (2011). Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology, 22(7), 075206. https://doi.org/10.1088/0957-4484/22/7/075206
Motayed, Abhishek, et al. "Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires." Nanotechnology vol. 22,7 (2011): 075206. doi: https://doi.org/10.1088/0957-4484/22/7/075206
Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14. PMID: 21233538.
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Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14.

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.

Nanotechnology

Abhishek Motayed, John E Bonevich, Sergiy Krylyuk, Albert V Davydov, Geetha Aluri, Mulpuri V Rao

Affiliations

  1. Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA. [email protected]

PMID: 21233538 DOI: 10.1088/0957-4484/22/7/075206

Abstract

Understanding the electrical and microstructural aspects of contact formation at nanoscale is essential for the realization of low-resistance metallization suitable for the next generation of nanowire based devices. In this study, we present detailed electrical and microstructural characteristics of Ti/Al/Ti/Au metal contacts to p-type Si nanowires (SiNWs) annealed at various temperatures. Focused ion beam cross-sectioning techniques and scanning transmission electron microscopy (STEM) were used to determine the microstructure of the source/drain metal contacts of working SiNW field-effect transistors (FETs) annealed for 30 s in the 450-850 °C temperature range in inert atmosphere. Formation of titanium silicides is observed at the metal/semiconductor interface after the 750 °C anneal. Extensive Si out-diffusion from the nanowire after the 750 °C anneal led to Kirkendall void formation. Annealing at 850 °C led to almost complete out-diffusion of Si from the nanowire core. Devices with 550 °C annealed contacts had linear electrical characteristics; whereas the devices annealed at 750 °C had the best characteristics in terms of linearity, symmetric behavior, and yield. Devices annealed at 850 °C had poor yield, which can be directly attributed to the microstructure of the contact region observed in STEM.

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