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Showing 1 to 12 of 34 entries
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Near-theoretical fracture strengths in native and oxidized silicon nanowires.

Nanotechnology

DelRio FW, White RM, Krylyuk S, Davydov AV, Friedman LH, Cook RF.
PMID: 27325151
Nanotechnology. 2016 Aug 05;27(31):31LT02. doi: 10.1088/0957-4484/27/31/31LT02. Epub 2016 Jun 21.

In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to...

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DelRio FW, White RM, Krylyuk S, et al. Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology. 2016;27(31):31LT02doi: 10.1088/0957-4484/27/31/31LT02.
DelRio, F. W., White, R. M., Krylyuk, S., Davydov, A. V., Friedman, L. H., & Cook, R. F. (2016). Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology, 27(31), 31LT02. https://doi.org/10.1088/0957-4484/27/31/31LT02
DelRio, Frank W, et al. "Near-theoretical fracture strengths in native and oxidized silicon nanowires." Nanotechnology vol. 27,31 (2016): 31LT02. doi: https://doi.org/10.1088/0957-4484/27/31/31LT02
DelRio FW, White RM, Krylyuk S, Davydov AV, Friedman LH, Cook RF. Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology. 2016 Aug 05;27(31):31LT02. doi: 10.1088/0957-4484/27/31/31LT02. Epub 2016 Jun 21. PMID: 27325151.
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Tapering control of Si nanowires grown from SiClâ‚„ at reduced pressure.

ACS nano

Krylyuk S, Davydov AV, Levin I.
PMID: 21158417
ACS Nano. 2011 Jan 25;5(1):656-64. doi: 10.1021/nn102556s. Epub 2010 Dec 15.

Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si nanowires grown by chemical vapor...

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Krylyuk S, Davydov AV, Levin I. Tapering control of Si nanowires grown from SiClâ‚„ at reduced pressure. ACS Nano. 2010;5(1):656-64doi: 10.1021/nn102556s.
Krylyuk, S., Davydov, A. V., & Levin, I. (2011). Tapering control of Si nanowires grown from SiClâ‚„ at reduced pressure. ACS nano, 5(1), 656-64. https://doi.org/10.1021/nn102556s
Krylyuk, Sergiy, et al. "Tapering control of Si nanowires grown from SiClâ‚„ at reduced pressure." ACS nano vol. 5,1 (2011): 656-64. doi: https://doi.org/10.1021/nn102556s
Krylyuk S, Davydov AV, Levin I. Tapering control of Si nanowires grown from SiClâ‚„ at reduced pressure. ACS Nano. 2011 Jan 25;5(1):656-64. doi: 10.1021/nn102556s. Epub 2010 Dec 15. PMID: 21158417.
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Fatal pulmonary embolism, death rates and standardised mortality ratios after primary total hip replacement in a joint replacement centre.

Hip international : the journal of clinical and experimental research on hip pathology and therapy

Khan A, Kiryluk S, Fordyce MJ.
PMID: 19197846
Hip Int. 2007 Apr-Jun;17(2):59-63. doi: 10.5301/hip.2008.2710.

We determined retrospectively the postoperative mortality and fatal pulmonary embolism (PE) rates in 1275 consecutive primary total hip replacements (THR) in the six-week period after surgery at an orthopaedic hospital. Patients were traced by questionnaires, outpatient appointments and by...

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Khan A, Kiryluk S, Fordyce MJ. Fatal pulmonary embolism, death rates and standardised mortality ratios after primary total hip replacement in a joint replacement centre. Hip Int. 2007;17(2):59-63doi: 10.5301/hip.2008.2710.
Khan, A., Kiryluk, S., & Fordyce, M. J. (2007). Fatal pulmonary embolism, death rates and standardised mortality ratios after primary total hip replacement in a joint replacement centre. Hip international : the journal of clinical and experimental research on hip pathology and therapy, 17(2), 59-63. https://doi.org/10.5301/hip.2008.2710
Khan, A, et al. "Fatal pulmonary embolism, death rates and standardised mortality ratios after primary total hip replacement in a joint replacement centre." Hip international : the journal of clinical and experimental research on hip pathology and therapy vol. 17,2 (2007): 59-63. doi: https://doi.org/10.5301/hip.2008.2710
Khan A, Kiryluk S, Fordyce MJ. Fatal pulmonary embolism, death rates and standardised mortality ratios after primary total hip replacement in a joint replacement centre. Hip Int. 2007 Apr-Jun;17(2):59-63. doi: 10.5301/hip.2008.2710. PMID: 19197846.
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Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.

Nanotechnology

Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV.
PMID: 21233538
Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14.

Understanding the electrical and microstructural aspects of contact formation at nanoscale is essential for the realization of low-resistance metallization suitable for the next generation of nanowire based devices. In this study, we present detailed electrical and microstructural characteristics of...

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Motayed A, Bonevich JE, Krylyuk S, et al. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011;22(7):075206doi: 10.1088/0957-4484/22/7/075206.
Motayed, A., Bonevich, J. E., Krylyuk, S., Davydov, A. V., Aluri, G., & Rao, M. V. (2011). Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology, 22(7), 075206. https://doi.org/10.1088/0957-4484/22/7/075206
Motayed, Abhishek, et al. "Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires." Nanotechnology vol. 22,7 (2011): 075206. doi: https://doi.org/10.1088/0957-4484/22/7/075206
Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14. PMID: 21233538.
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Probing the Optical Properties and Strain-Tuning of Ultrathin Mo.

Nano letters

Aslan OB, Datye IM, Mleczko MJ, Sze Cheung K, Krylyuk S, Bruma A, Kalish I, Davydov AV, Pop E, Heinz TF.
PMID: 29561623
Nano Lett. 2018 Apr 11;18(4):2485-2491. doi: 10.1021/acs.nanolett.8b00049. Epub 2018 Mar 29.

Ultrathin transition metal dichalcogenides (TMDCs) have recently been extensively investigated to understand their electronic and optical properties. Here we study ultrathin Mo

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Aslan OB, Datye IM, Mleczko MJ, et al. Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano Lett. 2018;18(4):2485-2491doi: 10.1021/acs.nanolett.8b00049.
Aslan, O. B., Datye, I. M., Mleczko, M. J., Sze Cheung, K., Krylyuk, S., Bruma, A., Kalish, I., Davydov, A. V., Pop, E., & Heinz, T. F. (2018). Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano letters, 18(4), 2485-2491. https://doi.org/10.1021/acs.nanolett.8b00049
Aslan, Ozgur Burak, et al. "Probing the Optical Properties and Strain-Tuning of Ultrathin Mo." Nano letters vol. 18,4 (2018): 2485-2491. doi: https://doi.org/10.1021/acs.nanolett.8b00049
Aslan OB, Datye IM, Mleczko MJ, Sze Cheung K, Krylyuk S, Bruma A, Kalish I, Davydov AV, Pop E, Heinz TF. Probing the Optical Properties and Strain-Tuning of Ultrathin Mo. Nano Lett. 2018 Apr 11;18(4):2485-2491. doi: 10.1021/acs.nanolett.8b00049. Epub 2018 Mar 29. PMID: 29561623; PMCID: PMC7243468.
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Electric-field induced structural transition in vertical MoTe.

Nature materials

Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J.
PMID: 30542093
Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10.

Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H semiconducting to a distorted transient structure (2H

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Zhang F, Zhang H, Krylyuk S, et al. Electric-field induced structural transition in vertical MoTe. Nat Mater. 2018;18(1):55-61doi: 10.1038/s41563-018-0234-y.
Zhang, F., Zhang, H., Krylyuk, S., Milligan, C. A., Zhu, Y., Zemlyanov, D. Y., Bendersky, L. A., Burton, B. P., Davydov, A. V., & Appenzeller, J. (2019). Electric-field induced structural transition in vertical MoTe. Nature materials, 18(1), 55-61. https://doi.org/10.1038/s41563-018-0234-y
Zhang, Feng, et al. "Electric-field induced structural transition in vertical MoTe." Nature materials vol. 18,1 (2019): 55-61. doi: https://doi.org/10.1038/s41563-018-0234-y
Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J. Electric-field induced structural transition in vertical MoTe. Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10. PMID: 30542093.
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Comprehensive optical characterization of atomically thin NbSe.

Physical review. B

Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH.
PMID: 30984898
Phys Rev B. 2018;98. doi: 10.1103/PhysRevB.98.165109.

Transition-metal dichalcogenides (TMDCs) have offered experimental access to quantum confinement in one dimension. In recent years, metallic TMDCs like NbSe

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Hill HM, Rigosi AF, Krylyuk S, et al. Comprehensive optical characterization of atomically thin NbSe. Phys Rev B. 2018;98doi: 10.1103/PhysRevB.98.165109.
Hill, H. M., Rigosi, A. F., Krylyuk, S., Tian, J., Nguyen, N. V., Davydov, A. V., Newell, D. B., & Walker, A. R. H. (2018). Comprehensive optical characterization of atomically thin NbSe. Physical review. B, 98. https://doi.org/10.1103/PhysRevB.98.165109
Hill, Heather M, et al. "Comprehensive optical characterization of atomically thin NbSe." Physical review. B vol. 98 (2018). doi: https://doi.org/10.1103/PhysRevB.98.165109
Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH. Comprehensive optical characterization of atomically thin NbSe. Phys Rev B. 2018;98. doi: 10.1103/PhysRevB.98.165109. PMID: 30984898; PMCID: PMC6459197.
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Formation of High-Conductive C Subunit Channels upon Interaction with Cyclophilin D.

International journal of molecular sciences

Amodeo GF, Krilyuk N, Pavlov EV.
PMID: 34681682
Int J Mol Sci. 2021 Oct 13;22(20). doi: 10.3390/ijms222011022.

The c subunit of the ATP synthase is an inner mitochondrial membrane (IMM) protein. Besides its role as the main component of the rotor of the ATP synthase, c subunit from mammalian mitochondria exhibits ion channel activity. In particular,...

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Amodeo GF, Krilyuk N, Pavlov EV. Formation of High-Conductive C Subunit Channels upon Interaction with Cyclophilin D. Int J Mol Sci. 2021;22(20)doi: 10.3390/ijms222011022.
Amodeo, G. F., Krilyuk, N., & Pavlov, E. V. (2021). Formation of High-Conductive C Subunit Channels upon Interaction with Cyclophilin D. International journal of molecular sciences, 22(20), . https://doi.org/10.3390/ijms222011022
Amodeo, Giuseppe Federico, et al. "Formation of High-Conductive C Subunit Channels upon Interaction with Cyclophilin D." International journal of molecular sciences vol. 22,20 (2021). doi: https://doi.org/10.3390/ijms222011022
Amodeo GF, Krilyuk N, Pavlov EV. Formation of High-Conductive C Subunit Channels upon Interaction with Cyclophilin D. Int J Mol Sci. 2021 Oct 13;22(20). doi: 10.3390/ijms222011022. PMID: 34681682; PMCID: PMC8538490.
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The structural phases and vibrational properties of Mo.

2d materials

Oliver SM, Beams R, Krylyuk S, Kalish I, Singh AK, Bruma A, Tavazza F, Joshi J, Stone IR, Stranick SJ, Davydov AV, Vora PM.
PMID: 33282319
2d Mater. 2017;4. doi: 10.1088/2053-1583/aa7a32.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe

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Oliver SM, Beams R, Krylyuk S, et al. The structural phases and vibrational properties of Mo. 2d Mater. 2017;4doi: 10.1088/2053-1583/aa7a32.
Oliver, S. M., Beams, R., Krylyuk, S., Kalish, I., Singh, A. K., Bruma, A., Tavazza, F., Joshi, J., Stone, I. R., Stranick, S. J., Davydov, A. V., & Vora, P. M. (2017). The structural phases and vibrational properties of Mo. 2d materials, 4. https://doi.org/10.1088/2053-1583/aa7a32
Oliver, Sean M, et al. "The structural phases and vibrational properties of Mo." 2d materials vol. 4 (2017). doi: https://doi.org/10.1088/2053-1583/aa7a32
Oliver SM, Beams R, Krylyuk S, Kalish I, Singh AK, Bruma A, Tavazza F, Joshi J, Stone IR, Stranick SJ, Davydov AV, Vora PM. The structural phases and vibrational properties of Mo. 2d Mater. 2017;4. doi: 10.1088/2053-1583/aa7a32. PMID: 33282319; PMCID: PMC7713509.
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Automated Mechanical Exfoliation of MoS.

IEEE transactions on nanotechnology

DiCamillo K, Krylyuk S, Shi W, Davydov A, Paranjape M.
PMID: 33214773
IEEE Trans Nanotechnol. 2019;18.

An automated technique is presented for mechanically exfoliating single-layer and few-layer transition metal dichalcogenides using controlled shear and normal forces imposed by a parallel plate rheometer. A thin sample that is removed from bulk MoS

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DiCamillo K, Krylyuk S, Shi W, et al. Automated Mechanical Exfoliation of MoS. IEEE Trans Nanotechnol. 2019;18
DiCamillo, K., Krylyuk, S., Shi, W., Davydov, A., & Paranjape, M. (2019). Automated Mechanical Exfoliation of MoS. IEEE transactions on nanotechnology, 18.
DiCamillo, Kyle, et al. "Automated Mechanical Exfoliation of MoS." IEEE transactions on nanotechnology vol. 18 (2019).
DiCamillo K, Krylyuk S, Shi W, Davydov A, Paranjape M. Automated Mechanical Exfoliation of MoS. IEEE Trans Nanotechnol. 2019;18. PMID: 33214773; PMCID: PMC7673202.
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Doping of MoTe.

ACS applied materials & interfaces

Stan G, Ciobanu CV, Likith SRJ, Rani A, Zhang S, Hacker CA, Krylyuk S, Davydov AV.
PMID: 32192325
ACS Appl Mater Interfaces. 2020 Apr 15;12(15):18182-18193. doi: 10.1021/acsami.0c04339. Epub 2020 Apr 02.

Doping is a key process by which the concentration and type of majority carriers can be tuned to achieve desired conduction properties. The common way of doping is via bulk impurities, as in the case of silicon. For van...

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Stan G, Ciobanu CV, Likith SRJ, et al. Doping of MoTe. ACS Appl Mater Interfaces. 2020;12(15):18182-18193doi: 10.1021/acsami.0c04339.
Stan, G., Ciobanu, C. V., Likith, S. R. J., Rani, A., Zhang, S., Hacker, C. A., Krylyuk, S., & Davydov, A. V. (2020). Doping of MoTe. ACS applied materials & interfaces, 12(15), 18182-18193. https://doi.org/10.1021/acsami.0c04339
Stan, Gheorghe, et al. "Doping of MoTe." ACS applied materials & interfaces vol. 12,15 (2020): 18182-18193. doi: https://doi.org/10.1021/acsami.0c04339
Stan G, Ciobanu CV, Likith SRJ, Rani A, Zhang S, Hacker CA, Krylyuk S, Davydov AV. Doping of MoTe. ACS Appl Mater Interfaces. 2020 Apr 15;12(15):18182-18193. doi: 10.1021/acsami.0c04339. Epub 2020 Apr 02. PMID: 32192325; PMCID: PMC7425619.
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Compressive stress effect on the radial elastic modulus of oxidized Si nanowires.

Nano letters

Stan G, Krylyuk S, Davydov AV, Cook RF.
PMID: 20433162
Nano Lett. 2010 Jun 09;10(6):2031-7. doi: 10.1021/nl100062n.

Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their diameter....

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Stan G, Krylyuk S, Davydov AV, et al. Compressive stress effect on the radial elastic modulus of oxidized Si nanowires. Nano Lett. 2010;10(6):2031-7doi: 10.1021/nl100062n.
Stan, G., Krylyuk, S., Davydov, A. V., & Cook, R. F. (2010). Compressive stress effect on the radial elastic modulus of oxidized Si nanowires. Nano letters, 10(6), 2031-7. https://doi.org/10.1021/nl100062n
Stan, G, et al. "Compressive stress effect on the radial elastic modulus of oxidized Si nanowires." Nano letters vol. 10,6 (2010): 2031-7. doi: https://doi.org/10.1021/nl100062n
Stan G, Krylyuk S, Davydov AV, Cook RF. Compressive stress effect on the radial elastic modulus of oxidized Si nanowires. Nano Lett. 2010 Jun 09;10(6):2031-7. doi: 10.1021/nl100062n. PMID: 20433162.
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Showing 1 to 12 of 34 entries