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Zhao J, Zhang X, Guo X, et al. Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm. Opt Lett. 2013;38(8):1206-8doi: 10.1364/OL.38.001206.
Zhao, J., Zhang, X., Guo, X., Bao, X., Li, L., & Cui, J. (2013). Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm. Optics letters, 38(8), 1206-8. https://doi.org/10.1364/OL.38.001206
Zhao, Jiaqun, et al. "Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm." Optics letters vol. 38,8 (2013): 1206-8. doi: https://doi.org/10.1364/OL.38.001206
Zhao J, Zhang X, Guo X, Bao X, Li L, Cui J. Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm. Opt Lett. 2013 Apr 15;38(8):1206-8. doi: 10.1364/OL.38.001206. PMID: 23595432.
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Opt Lett. 2013 Apr 15;38(8):1206-8. doi: 10.1364/OL.38.001206.

Diode-pumped actively Q-switched Tm, Ho:GdVO4/BaWO4 intracavity Raman laser at 2533 nm.

Optics letters

Jiaqun Zhao, Xinlu Zhang, Xu Guo, Xiujuan Bao, Li Li, Jinhui Cui

Affiliations

  1. Key Laboratory of In-Fiber Integrated Optics (Ministry of Education) and College of Science, Harbin Engineering University, Harbin 150001, China.

PMID: 23595432 DOI: 10.1364/OL.38.001206

Abstract

A compact diode-end-pumped actively Q-switched intracavity Raman laser with Tm,Ho:GdVO(4) laser gain medium and BaWO(4) Raman gain crystal is demonstrated for the first time. The Raman threshold is as low as 2.0 W of diode power at 802 nm. The highest average output power of 186 mW at the first Stokes wavelength of 2533 nm is obtained at a pulse repetition rate of 1 kHz, and a pump power of 2.8 W, corresponding to a diode-to-Stokes optical conversion efficiency of 6.6%. The pulsewidth and pulse energy are 7.8 ns and 0.19 mJ, respectively.

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