Display options
Cite
Korn D, Palmer R, Yu H, et al. Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s. Opt Express. 2013;21(11):13219-27doi: 10.1364/OE.21.013219.
Korn, D., Palmer, R., Yu, H., Schindler, P. C., Alloatti, L., Baier, M., Schmogrow, R., Bogaerts, W., Selvaraja, S. K., Lepage, G., Pantouvaki, M., Wouters, J. M., Verheyen, P., Van Campenhout, J., Chen, B., Baets, R., Absil, P., Dinu, R., Koos, C., Freude, W., & Leuthold, J. (2013). Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s. Optics express, 21(11), 13219-27. https://doi.org/10.1364/OE.21.013219
Korn, Dietmar, et al. "Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s." Optics express vol. 21,11 (2013): 13219-27. doi: https://doi.org/10.1364/OE.21.013219
Korn D, Palmer R, Yu H, Schindler PC, Alloatti L, Baier M, Schmogrow R, Bogaerts W, Selvaraja SK, Lepage G, Pantouvaki M, Wouters JM, Verheyen P, Van Campenhout J, Chen B, Baets R, Absil P, Dinu R, Koos C, Freude W, Leuthold J. Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s. Opt Express. 2013 Jun 03;21(11):13219-27. doi: 10.1364/OE.21.013219. PMID: 23736576.
Copy Download .nbib Format: NLM
Share it on

Opt Express. 2013 Jun 03;21(11):13219-27. doi: 10.1364/OE.21.013219.

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s.

Optics express

Dietmar Korn, Robert Palmer, Hui Yu, Philipp C Schindler, Luca Alloatti, Moritz Baier, René Schmogrow, Wim Bogaerts, Shankar Kumar Selvaraja, Guy Lepage, Marianna Pantouvaki, Johan M D Wouters, Peter Verheyen, Joris Van Campenhout, Baoquan Chen, Roel Baets, Philippe Absil, Raluca Dinu, Christian Koos, Wolfgang Freude, Juerg Leuthold

Affiliations

  1. Karlsruhe Institute of Technology (KIT), Institutes IPQ and IMT, Karlsruhe, Germany. [email protected]

PMID: 23736576 DOI: 10.1364/OE.21.013219

Abstract

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

Publication Types