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Zhao Y, Hao X, Zhang Q. Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films. ACS Appl Mater Interfaces. 2014;6(14):11633-9doi: 10.1021/am502415z.
Zhao, Y., Hao, X., & Zhang, Q. (2014). Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films. ACS applied materials & interfaces, 6(14), 11633-9. https://doi.org/10.1021/am502415z
Zhao, Ye, et al. "Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films." ACS applied materials & interfaces vol. 6,14 (2014): 11633-9. doi: https://doi.org/10.1021/am502415z
Zhao Y, Hao X, Zhang Q. Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films. ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11633-9. doi: 10.1021/am502415z. Epub 2014 Jul 10. PMID: 24979466.
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ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11633-9. doi: 10.1021/am502415z. Epub 2014 Jul 10.

Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

ACS applied materials & interfaces

Ye Zhao, Xihong Hao, Qi Zhang

Affiliations

  1. School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , Baotou 014010, China.

PMID: 24979466 DOI: 10.1021/am502415z

Abstract

Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

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