Display options
Cite
Park JH, Lee YJ, Bae JS, et al. Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM. Nanoscale Res Lett. 2015;10:186doi: 10.1186/s11671-015-0887-2.
Park, J. H., Lee, Y. J., Bae, J. S., Kim, B. S., Cho, Y. C., Moriyoshi, C., Kuroiwa, Y., Lee, S., & Jeong, S. Y. (2015). Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM. Nanoscale research letters, 10186. https://doi.org/10.1186/s11671-015-0887-2
Park, Ji Hun, et al. "Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM." Nanoscale research letters vol. 10 (2015): 186. doi: https://doi.org/10.1186/s11671-015-0887-2
Park JH, Lee YJ, Bae JS, Kim BS, Cho YC, Moriyoshi C, Kuroiwa Y, Lee S, Jeong SY. Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM. Nanoscale Res Lett. 2015 Apr 18;10:186. doi: 10.1186/s11671-015-0887-2. eCollection 2015. PMID: 25977658; PMCID: PMC4414861.
Copy Download .nbib Format: NLM
Share it on

Nanoscale Res Lett. 2015 Apr 18;10:186. doi: 10.1186/s11671-015-0887-2. eCollection 2015.

Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM.

Nanoscale research letters

Ji Hun Park, Yeong Ju Lee, Jong-Seong Bae, Bum-Su Kim, Yong Chan Cho, Chikako Moriyoshi, Yoshihiro Kuroiwa, Seunghun Lee, Se-Young Jeong

Affiliations

  1. Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 South Korea.
  2. Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 South Korea ; Department of Nanofusion Engineering, Pusan National University, Busan, 609-735 South Korea.
  3. Busan Center, Korea Basic Science Institute, Busan, 618-230 South Korea.
  4. Frontier in Extreme Physics, Korea Research Institute of Standards and Science, Daejeon, 305-340 South Korea.
  5. Department of Physical Science, Hiroshima University, Higashi-Hiroshima, 739-8526 Japan.
  6. The Institute of Basic Science, Korea University, Seoul, 136-713 Republic of Korea ; Current address: Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 USA.

PMID: 25977658 PMCID: PMC4414861 DOI: 10.1186/s11671-015-0887-2

Abstract

Oxygen vacancy (VO) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the VO concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the difference. VO tended to gradually decrease with increased Co doping, and ferromagnetic behavior was not observed regardless of the Co-doping concentration. MEM analysis demonstrated that reliable information related to the defects in the ZnO-based system can be obtained using X-ray diffraction alone.

Keywords: Co-doped ZnO; Maximum entropy method; Oxygen vacancy; Rietveld refinement; ZnO

References

  1. Science. 2002 Dec 20;298(5602):2358-61 - PubMed
  2. Angew Chem Int Ed Engl. 2006 Jan 9;45(3):420-3 - PubMed
  3. Phys Rev Lett. 2011 Sep 16;107(12):127206 - PubMed
  4. Chemosphere. 2003 Apr;51(2):129-37 - PubMed
  5. J Mater Sci Mater Med. 2004 Aug;15(8):847-51 - PubMed
  6. Science. 2003 Jan 17;299(5605):377-9 - PubMed
  7. Langmuir. 2011 Apr 5;27(7):3872-7 - PubMed
  8. Nature. 2004 Aug 5;430(7000):657-61 - PubMed
  9. Phys Rev Lett. 2001 Nov 19;87(21):217601 - PubMed

Publication Types