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Sanne A, Ghosh R, Rai A, et al. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Lett. 2015;15(8):5039-45doi: 10.1021/acs.nanolett.5b01080.
Sanne, A., Ghosh, R., Rai, A., Yogeesh, M. N., Shin, S. H., Sharma, A., Jarvis, K., Mathew, L., Rao, R., Akinwande, D., & Banerjee, S. (2015). Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano letters, 15(8), 5039-45. https://doi.org/10.1021/acs.nanolett.5b01080
Sanne, Atresh, et al. "Radio Frequency Transistors and Circuits Based on CVD MoS2." Nano letters vol. 15,8 (2015): 5039-45. doi: https://doi.org/10.1021/acs.nanolett.5b01080
Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Lett. 2015 Aug 12;15(8):5039-45. doi: 10.1021/acs.nanolett.5b01080. Epub 2015 Jul 08. PMID: 26134588.
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Nano Lett. 2015 Aug 12;15(8):5039-45. doi: 10.1021/acs.nanolett.5b01080. Epub 2015 Jul 08.

Radio Frequency Transistors and Circuits Based on CVD MoS2.

Nano letters

Atresh Sanne, Rudresh Ghosh, Amritesh Rai, Maruthi Nagavalli Yogeesh, Seung Heon Shin, Ankit Sharma, Karalee Jarvis, Leo Mathew, Rajesh Rao, Deji Akinwande, Sanjay Banerjee

Affiliations

  1. †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
  2. §Applied Novel Devices Inc., Austin, Texas 78717, United States.

PMID: 26134588 DOI: 10.1021/acs.nanolett.5b01080

Abstract

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Keywords: CVD; MoS2; circuits; field-effect transistor; high-k; radio frequency

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