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Kim J, Baik SS, Ryu SH, et al. 2D MATERIALS. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science. 2015;349(6249):723-6doi: 10.1126/science.aaa6486.
Kim, J., Baik, S. S., Ryu, S. H., Sohn, Y., Park, S., Park, B. G., Denlinger, J., Yi, Y., Choi, H. J., & Kim, K. S. (2015). 2D MATERIALS. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science (New York, N.Y.), 349(6249), 723-6. https://doi.org/10.1126/science.aaa6486
Kim, Jimin, et al. "2D MATERIALS. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus." Science (New York, N.Y.) vol. 349,6249 (2015): 723-6. doi: https://doi.org/10.1126/science.aaa6486
Kim J, Baik SS, Ryu SH, Sohn Y, Park S, Park BG, Denlinger J, Yi Y, Choi HJ, Kim KS. 2D MATERIALS. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science. 2015 Aug 14;349(6249):723-6. doi: 10.1126/science.aaa6486. PMID: 26273052.
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Science. 2015 Aug 14;349(6249):723-6. doi: 10.1126/science.aaa6486.

2D MATERIALS. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus.

Science (New York, N.Y.)

Jimin Kim, Seung Su Baik, Sae Hee Ryu, Yeongsup Sohn, Soohyung Park, Byeong-Gyu Park, Jonathan Denlinger, Yeonjin Yi, Hyoung Joon Choi, Keun Su Kim

Affiliations

  1. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea.
  2. Department of Physics, Yonsei University, Seoul 120-749, Korea. Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 120-749, Korea.
  3. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang 790-784, Korea.
  4. Department of Physics, Yonsei University, Seoul 120-749, Korea.
  5. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea.
  6. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  7. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang 790-784, Korea. [email protected].

PMID: 26273052 DOI: 10.1126/science.aaa6486

Abstract

Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ surface doping technique. Through band structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the band gap, owing to the giant Stark effect, and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

Copyright © 2015, American Association for the Advancement of Science.

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