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Li N, Liu K, Sorger VJ, et al. Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects. Sci Rep. 2015;5:14067doi: 10.1038/srep14067.
Li, N., Liu, K., Sorger, V. J., & Sadana, D. K. (2015). Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects. Scientific reports, 514067. https://doi.org/10.1038/srep14067
Li, Ning, et al. "Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects." Scientific reports vol. 5 (2015): 14067. doi: https://doi.org/10.1038/srep14067
Li N, Liu K, Sorger VJ, Sadana DK. Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects. Sci Rep. 2015 Sep 15;5:14067. doi: 10.1038/srep14067. PMID: 26369698; PMCID: PMC4570205.
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Sci Rep. 2015 Sep 15;5:14067. doi: 10.1038/srep14067.

Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects.

Scientific reports

Ning Li, Ke Liu, Volker J Sorger, Devendra K Sadana

Affiliations

  1. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA.
  2. Department of Electrical and Computer Engineering, George Washington University, Washington, DC 20052, USA.
  3. The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, P.R. China.

PMID: 26369698 PMCID: PMC4570205 DOI: 10.1038/srep14067

Abstract

Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III-V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III-V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III-V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes.

References

  1. Opt Express. 2009 May 11;17(10):7790-9 - PubMed
  2. Opt Lett. 1987 Oct 1;12(10):812-3 - PubMed
  3. Nano Lett. 2012 Oct 10;12(10):5396-402 - PubMed
  4. Phys Rev B Condens Matter. 1988 Dec 15;38(17):12345-12352 - PubMed

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