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Lee S, Lee J, Kang TY, et al. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes. J Nanosci Nanotechnol. 2015;15(11):9308-13doi: 10.1166/jnn.2015.11430.
Lee, S., Lee, J., Kang, T. Y., Kyoung, S., Jung, E. S., & Kim, K. H. (2015). Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes. Journal of nanoscience and nanotechnology, 15(11), 9308-13. https://doi.org/10.1166/jnn.2015.11430
Lee, Seula, et al. "Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes." Journal of nanoscience and nanotechnology vol. 15,11 (2015): 9308-13. doi: https://doi.org/10.1166/jnn.2015.11430
Lee S, Lee J, Kang TY, Kyoung S, Jung ES, Kim KH. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes. J Nanosci Nanotechnol. 2015 Nov;15(11):9308-13. doi: 10.1166/jnn.2015.11430. PMID: 26726688.
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