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Lyu F, Liu X, Ding Y, et al. Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices. Sensors (Basel). 2016;16(1)doi: 10.3390/s16010106.
Lyu, F., Liu, X., Ding, Y., Toh, E. H., Zhang, Z., Pan, Y., Wang, Z., Li, C., Li, L., Sha, J., & Pan, H. (2016). Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices. Sensors (Basel, Switzerland), 16(1), . https://doi.org/10.3390/s16010106
Lyu, Fei, et al. "Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices." Sensors (Basel, Switzerland) vol. 16,1 (2016). doi: https://doi.org/10.3390/s16010106
Lyu F, Liu X, Ding Y, Toh EH, Zhang Z, Pan Y, Wang Z, Li C, Li L, Sha J, Pan H. Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices. Sensors (Basel). 2016 Jan 15;16(1). doi: 10.3390/s16010106. PMID: 26784199; PMCID: PMC4732139.
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Sensors (Basel). 2016 Jan 15;16(1). doi: 10.3390/s16010106.

Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices.

Sensors (Basel, Switzerland)

Fei Lyu, Xinfu Liu, Yinjie Ding, Eng-Huat Toh, Zhenyan Zhang, Yifan Pan, Zhen Wang, Chengjie Li, Li Li, Jin Sha, Hongbing Pan

Affiliations

  1. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  2. Globalfoundries Singapore, Singapore 738406, Singapore. [email protected].
  3. Globalfoundries Singapore, Singapore 738406, Singapore. [email protected].
  4. Globalfoundries Singapore, Singapore 738406, Singapore. [email protected].
  5. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  6. Nanjing Foreign Language School, Nanjing 210008, China. [email protected].
  7. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  8. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  9. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  10. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].
  11. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China. [email protected].

PMID: 26784199 PMCID: PMC4732139 DOI: 10.3390/s16010106

Abstract

This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points impacting their performance, were characterized using a self-built measurement system. The work analyzes the influences of the aluminum covering on those two aspects of the performance. The aluminum layer covering mainly leads to an eddy-current effect in an unstable magnetic field and an additional depletion region above the active region. Those two points have influences on the sensitivity and the offset voltage, respectively. The analysis guides the designer whether to choose covering with an aluminum layer the active region of the Hall sensor as a method to reduce the flicker noise and to improve the stability of the Hall sensor. Because Hall devices, as a reference element, always suffer from a large dispersion, improving their stability is a crucial issue.

Keywords: aluminum covering; cross-like Hall sensor; offset voltage; sensitivity

References

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