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Phys Rev Lett. 2016 Mar 11;116(10):106404. doi: 10.1103/PhysRevLett.116.106404. Epub 2016 Mar 09.

Carrier Multiplication in a Single Semiconductor Nanocrystal.

Physical review letters

Fengrui Hu, Bihu Lv, Chunyang Yin, Chunfeng Zhang, Xiaoyong Wang, Brahim Lounis, Min Xiao

Affiliations

  1. National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  2. Laboratoire Photonique Numérique et Nanosciences, Université de Bordeaux, Institut d'Optique Graduate School and CNRS, Talence 33405, France.
  3. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.

PMID: 27015498 DOI: 10.1103/PhysRevLett.116.106404

Abstract

To confirm the existence of the carrier multiplication (CM) effect and estimate its generation efficiency of multiple excitons in semiconductor nanocrystals (NCs), it is imperative to completely exclude the false contribution of charged excitons from the measured CM signal. Here we place single CdSe NCs above an aluminum film and successfully resolve their UV-excited photoluminescence (PL) time trajectories where the true and false CM signals are contained in the blinking "on" and "off" levels, respectively. By analyzing the PL dynamics of the on-level photons, an average CM efficiency of ∼20.2% can be reliably estimated when the UV photon energy is ∼2.46 times the NC energy gap.

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