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Wei P, Lee S, Lemaitre F, et al. Strong interfacial exchange field in the graphene/EuS heterostructure. Nat Mater. 2016;15(7):711-6doi: 10.1038/nmat4603.
Wei, P., Lee, S., Lemaitre, F., Pinel, L., Cutaia, D., Cha, W., Katmis, F., Zhu, Y., Heiman, D., Hone, J., Moodera, J. S., & Chen, C. T. (2016). Strong interfacial exchange field in the graphene/EuS heterostructure. Nature materials, 15(7), 711-6. https://doi.org/10.1038/nmat4603
Wei, Peng, et al. "Strong interfacial exchange field in the graphene/EuS heterostructure." Nature materials vol. 15,7 (2016): 711-6. doi: https://doi.org/10.1038/nmat4603
Wei P, Lee S, Lemaitre F, Pinel L, Cutaia D, Cha W, Katmis F, Zhu Y, Heiman D, Hone J, Moodera JS, Chen CT. Strong interfacial exchange field in the graphene/EuS heterostructure. Nat Mater. 2016 Jul;15(7):711-6. doi: 10.1038/nmat4603. Epub 2016 Mar 28. PMID: 27019382.
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Nat Mater. 2016 Jul;15(7):711-6. doi: 10.1038/nmat4603. Epub 2016 Mar 28.

Strong interfacial exchange field in the graphene/EuS heterostructure.

Nature materials

Peng Wei, Sunwoo Lee, Florian Lemaitre, Lucas Pinel, Davide Cutaia, Wujoon Cha, Ferhat Katmis, Yu Zhu, Donald Heiman, James Hone, Jagadeesh S Moodera, Ching-Tzu Chen

Affiliations

  1. Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  2. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  3. IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
  4. Electrical Engineering Department, Columbia University, New York, New York 10027, USA.
  5. Institut polytechnique de Grenoble, F38031 Grenoble Cedex 1, France.
  6. IBM Zurich Research Laboratory, Säumerstrasse 4, CH- 8803 Rüschlikon, Switzerland.
  7. Mechanical Engineering Department, Columbia University, New York, New York 10027, USA.
  8. Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA.

PMID: 27019382 DOI: 10.1038/nmat4603

Abstract

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (>14 T) with the potential to reach hundreds of tesla, which leads to orders-of-magnitude enhancement of the spin signal originating from the Zeeman spin Hall effect. Furthermore, the new ferromagnetic ground state of Dirac electrons resulting from the strong MEF may give rise to quantized spin-polarized edge transport. The MEF effect shown in our graphene/EuS devices therefore provides a key functionality for future spin logic and memory devices based on emerging 2D materials in classical and quantum information processing.

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