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Stern A, Efimkin DK, Galitski V, et al. Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal. Phys Rev Lett. 2016;116(16):166603doi: 10.1103/PhysRevLett.116.166603.
Stern, A., Efimkin, D. K., Galitski, V., Fisk, Z., & Xia, J. (2016). Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal. Physical review letters, 116(16), 166603. https://doi.org/10.1103/PhysRevLett.116.166603
Stern, Alex, et al. "Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal." Physical review letters vol. 116,16 (2016): 166603. doi: https://doi.org/10.1103/PhysRevLett.116.166603
Stern A, Efimkin DK, Galitski V, Fisk Z, Xia J. Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal. Phys Rev Lett. 2016 Apr 22;116(16):166603. doi: 10.1103/PhysRevLett.116.166603. Epub 2016 Apr 20. PMID: 27152816.
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Phys Rev Lett. 2016 Apr 22;116(16):166603. doi: 10.1103/PhysRevLett.116.166603. Epub 2016 Apr 20.

Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal.

Physical review letters

Alex Stern, Dmitry K Efimkin, Victor Galitski, Zachary Fisk, Jing Xia

Affiliations

  1. Department of Physics and Astronomy, University of California, Irvine, California 92697, USA.
  2. Joint Quantum Institute and Condensed Matter Theory Center, University of Maryland, College Park, Maryland 20742-4111, USA.

PMID: 27152816 DOI: 10.1103/PhysRevLett.116.166603

Abstract

Radio frequency tunable oscillators are vital electronic components for signal generation, characterization, and processing. They are often constructed with a resonant circuit and a "negative" resistor, such as a Gunn diode, involving complex structure and large footprints. Here we report that a piece of SmB_{6}, 100  μm in size, works as a current-controlled oscillator in the 30 MHz frequency range. SmB_{6} is a strongly correlated Kondo insulator that was recently found to have a robust surface state likely to be protected by the topology of its electronics structure. We exploit its nonlinear dynamics, and demonstrate large ac voltage outputs with frequencies from 20 Hz to 30 MHz by adjusting a small dc bias current. The behaviors of these oscillators agree well with a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. With reduced crystal size we anticipate the device to work at higher frequencies, even in the THz regime. This type of oscillator might be realized in other materials with a metallic surface and a semiconducting bulk.

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