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Chiang CY, Hsiao SW, Wu PJ, et al. Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell. ACS Appl Mater Interfaces. 2016;8(36):24152-60doi: 10.1021/acsami.6b03869.
Chiang, C. Y., Hsiao, S. W., Wu, P. J., Yang, C. S., Chen, C. H., & Chou, W. C. (2016). Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell. ACS applied materials & interfaces, 8(36), 24152-60. https://doi.org/10.1021/acsami.6b03869
Chiang, Ching-Yu, et al. "Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell." ACS applied materials & interfaces vol. 8,36 (2016): 24152-60. doi: https://doi.org/10.1021/acsami.6b03869
Chiang CY, Hsiao SW, Wu PJ, Yang CS, Chen CH, Chou WC. Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell. ACS Appl Mater Interfaces. 2016 Sep 14;8(36):24152-60. doi: 10.1021/acsami.6b03869. Epub 2016 Aug 30. PMID: 27505175.
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ACS Appl Mater Interfaces. 2016 Sep 14;8(36):24152-60. doi: 10.1021/acsami.6b03869. Epub 2016 Aug 30.

Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell.

ACS applied materials & interfaces

Ching-Yu Chiang, Sheng-Wei Hsiao, Pin-Jiun Wu, Chu-Shou Yang, Chia-Hao Chen, Wu-Ching Chou

Affiliations

  1. Institute and Department of Electrophysics, National Chiao Tung University , Hsinchu 30010, Taiwan.
  2. National Synchrotron Radiation Research Center , Hsinchu 30076, Taiwan.
  3. Graduate Institute of Electro-Optical Engineering, Tatung University , Taipei 10452, Taiwan.

PMID: 27505175 DOI: 10.1021/acsami.6b03869

Abstract

Utilizing a scanning photoelectron microscope (SPEM) and grazing-incidence X-ray powder diffraction (GIXRD), we studied the electronic band structure and the crystalline properties of the pentanary Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cell as a function of sample depth on measuring the thickness-gradient sample. A novel approach is proposed for studying the depth-dependent information on thin films, which can provide a gradient thickness and a wide cross-section of the sample by polishing process. The results exhibit that the CIGSSe absorber layer possesses four distinct stoichiometries. The growth mechanism of this distinctive compositional distribution formed by a two-stage process is described according to the thermodynamic reaction and the manufacturing process. On the basis of the depth-profiling results, the gradient profiles of the conduction and valence bands were constructed to elucidate the performance of the electrical properties (in this case, Voc = 620 mV, Jsc = 34.6 mA/cm(2), and η = 14.04%); the valence-band maxima (VBM) measured with a SPEM in the spectroscopic mode coincide with this band-structure model, except for a lowering of the VBM observed in the surface region of the absorber layer due to the ordered defect compound (ODC). In addition, the depth-dependent texturing X-ray diffraction pattern presents the crystalline quality and the residual stress for each depth of a thin-film device. We find that the randomly oriented grains in the bottom region of the absorber layer and the different residual stress between the underlying Mo and the absorber interface, which can deteriorate the electrical performance due to peeling-off effect. An anion interstitial defect can be observed on comparing the anion concentration of the elemental distribution with crystalline composition; a few excess sulfur atoms insert in interstitial sites at the front side of the absorber layer, whereas the interstitial selenium atoms insert at the back side.

Keywords: CIGSSe; band diagram; grazing-incidence X-ray powder diffraction (GIXRD); ordered defect compound (ODC); polishing; residual stress; scanning photoelectron microscope (SPEM); solar cell

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