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Chen MW, Ovchinnikov D, Lazar S, et al. Highly Oriented Atomically Thin Ambipolar MoSe. ACS Nano. 2017;11(6):6355-6361doi: 10.1021/acsnano.7b02726.
Chen, M. W., Ovchinnikov, D., Lazar, S., Pizzochero, M., Whitwick, M. B., Surrente, A., Baranowski, M., Sanchez, O. L., Gillet, P., Plochocka, P., Yazyev, O. V., & Kis, A. (2017). Highly Oriented Atomically Thin Ambipolar MoSe. ACS nano, 11(6), 6355-6361. https://doi.org/10.1021/acsnano.7b02726
Chen, Ming-Wei, et al. "Highly Oriented Atomically Thin Ambipolar MoSe." ACS nano vol. 11,6 (2017): 6355-6361. doi: https://doi.org/10.1021/acsnano.7b02726
Chen MW, Ovchinnikov D, Lazar S, Pizzochero M, Whitwick MB, Surrente A, Baranowski M, Sanchez OL, Gillet P, Plochocka P, Yazyev OV, Kis A. Highly Oriented Atomically Thin Ambipolar MoSe. ACS Nano. 2017 Jun 27;11(6):6355-6361. doi: 10.1021/acsnano.7b02726. Epub 2017 May 26. PMID: 28530829; PMCID: PMC5492213.
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ACS Nano. 2017 Jun 27;11(6):6355-6361. doi: 10.1021/acsnano.7b02726. Epub 2017 May 26.

Highly Oriented Atomically Thin Ambipolar MoSe.

ACS nano

Ming-Wei Chen, Dmitry Ovchinnikov, Sorin Lazar, Michele Pizzochero, Michael Brian Whitwick, Alessandro Surrente, Michał Baranowski, Oriol Lopez Sanchez, Philippe Gillet, Paulina Plochocka, Oleg V Yazyev, Andras Kis

Affiliations

  1. Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne, Switzerland.
  2. Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne, Switzerland.
  3. FEI Electron Optics , 5600 KA Eindhoven, The Netherlands.
  4. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne, Switzerland.
  5. Laboratoire National des Champs Magnétiques Intenses CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France.
  6. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroc?aw University of Science and Technology , Wybrzeze Wyspianskiego 27, 50-370 Wroc?aw, Poland.

PMID: 28530829 PMCID: PMC5492213 DOI: 10.1021/acsnano.7b02726

Abstract

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe

Keywords: MoSe2; ambipolar electrical transport; epitaxial growth; transmission electron microscopy; two-dimensional materials; two-dimensional semiconductors

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