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Showing 1 to 12 of 57 entries
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Highly Oriented Atomically Thin Ambipolar MoSe.

ACS nano

Chen MW, Ovchinnikov D, Lazar S, Pizzochero M, Whitwick MB, Surrente A, Baranowski M, Sanchez OL, Gillet P, Plochocka P, Yazyev OV, Kis A.
PMID: 28530829
ACS Nano. 2017 Jun 27;11(6):6355-6361. doi: 10.1021/acsnano.7b02726. Epub 2017 May 26.

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties...

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Chen MW, Ovchinnikov D, Lazar S, et al. Highly Oriented Atomically Thin Ambipolar MoSe. ACS Nano. 2017;11(6):6355-6361doi: 10.1021/acsnano.7b02726.
Chen, M. W., Ovchinnikov, D., Lazar, S., Pizzochero, M., Whitwick, M. B., Surrente, A., Baranowski, M., Sanchez, O. L., Gillet, P., Plochocka, P., Yazyev, O. V., & Kis, A. (2017). Highly Oriented Atomically Thin Ambipolar MoSe. ACS nano, 11(6), 6355-6361. https://doi.org/10.1021/acsnano.7b02726
Chen, Ming-Wei, et al. "Highly Oriented Atomically Thin Ambipolar MoSe." ACS nano vol. 11,6 (2017): 6355-6361. doi: https://doi.org/10.1021/acsnano.7b02726
Chen MW, Ovchinnikov D, Lazar S, Pizzochero M, Whitwick MB, Surrente A, Baranowski M, Sanchez OL, Gillet P, Plochocka P, Yazyev OV, Kis A. Highly Oriented Atomically Thin Ambipolar MoSe. ACS Nano. 2017 Jun 27;11(6):6355-6361. doi: 10.1021/acsnano.7b02726. Epub 2017 May 26. PMID: 28530829; PMCID: PMC5492213.
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Topological aspects of charge-carrier transmission across grain boundaries in graphene.

Nano letters

Gargiulo F, Yazyev OV.
PMID: 24295423
Nano Lett. 2014 Jan 08;14(1):250-4. doi: 10.1021/nl403852a. Epub 2013 Dec 04.

Dislocations and grain boundaries are intrinsic topological defects of large-scale polycrystalline samples of graphene. These structural irregularities have been shown to strongly affect electronic transport in this material. Here, we report a systematic investigation of the transmission of charge...

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Gargiulo F, Yazyev OV. Topological aspects of charge-carrier transmission across grain boundaries in graphene. Nano Lett. 2013;14(1):250-4doi: 10.1021/nl403852a.
Gargiulo, F., & Yazyev, O. V. (2014). Topological aspects of charge-carrier transmission across grain boundaries in graphene. Nano letters, 14(1), 250-4. https://doi.org/10.1021/nl403852a
Gargiulo, Fernando, and Yazyev, Oleg V. "Topological aspects of charge-carrier transmission across grain boundaries in graphene." Nano letters vol. 14,1 (2014): 250-4. doi: https://doi.org/10.1021/nl403852a
Gargiulo F, Yazyev OV. Topological aspects of charge-carrier transmission across grain boundaries in graphene. Nano Lett. 2014 Jan 08;14(1):250-4. doi: 10.1021/nl403852a. Epub 2013 Dec 04. PMID: 24295423.
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Polycrystalline graphene and other two-dimensional materials.

Nature nanotechnology

Yazyev OV, Chen YP.
PMID: 25152238
Nat Nanotechnol. 2014 Oct;9(10):755-67. doi: 10.1038/nnano.2014.166. Epub 2014 Aug 17.

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications,...

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Yazyev OV, Chen YP. Polycrystalline graphene and other two-dimensional materials. Nat Nanotechnol. 2014;9(10):755-67doi: 10.1038/nnano.2014.166.
Yazyev, O. V., & Chen, Y. P. (2014). Polycrystalline graphene and other two-dimensional materials. Nature nanotechnology, 9(10), 755-67. https://doi.org/10.1038/nnano.2014.166
Yazyev, Oleg V, and Chen, Yong P. "Polycrystalline graphene and other two-dimensional materials." Nature nanotechnology vol. 9,10 (2014): 755-67. doi: https://doi.org/10.1038/nnano.2014.166
Yazyev OV, Chen YP. Polycrystalline graphene and other two-dimensional materials. Nat Nanotechnol. 2014 Oct;9(10):755-67. doi: 10.1038/nnano.2014.166. Epub 2014 Aug 17. PMID: 25152238.
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Magnetic moment and anisotropy of individual Co atoms on graphene.

Physical review letters

Donati F, Dubout Q, Autès G, Patthey F, Calleja F, Gambardella P, Yazyev OV, Brune H.
PMID: 24476294
Phys Rev Lett. 2013 Dec 06;111(23):236801. doi: 10.1103/PhysRevLett.111.236801. Epub 2013 Dec 03.

We report on the magnetic properties of single Co atoms on graphene on Pt(111). By means of scanning tunneling microscopy spin-excitation spectroscopy, we infer a magnetic anisotropy of K=-8.1  meV with out-of-plane hard axis and a magnetic moment of...

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Donati F, Dubout Q, Autès G, et al. Magnetic moment and anisotropy of individual Co atoms on graphene. Phys Rev Lett. 2013;111(23):236801doi: 10.1103/PhysRevLett.111.236801.
Donati, F., Dubout, Q., Autès, G., Patthey, F., Calleja, F., Gambardella, P., Yazyev, O. V., & Brune, H. (2013). Magnetic moment and anisotropy of individual Co atoms on graphene. Physical review letters, 111(23), 236801. https://doi.org/10.1103/PhysRevLett.111.236801
Donati, F, et al. "Magnetic moment and anisotropy of individual Co atoms on graphene." Physical review letters vol. 111,23 (2013): 236801. doi: https://doi.org/10.1103/PhysRevLett.111.236801
Donati F, Dubout Q, Autès G, Patthey F, Calleja F, Gambardella P, Yazyev OV, Brune H. Magnetic moment and anisotropy of individual Co atoms on graphene. Phys Rev Lett. 2013 Dec 06;111(23):236801. doi: 10.1103/PhysRevLett.111.236801. Epub 2013 Dec 03. PMID: 24476294.
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Evidence for a Strong Topological Insulator Phase in ZrTe_{5}.

Physical review letters

Manzoni G, Gragnaniello L, Autès G, Kuhn T, Sterzi A, Cilento F, Zacchigna M, Enenkel V, Vobornik I, Barba L, Bisti F, Bugnon P, Magrez A, Strocov VN, Berger H, Yazyev OV, Fonin M, Parmigiani F, Crepaldi A.
PMID: 27982645
Phys Rev Lett. 2016 Dec 02;117(23):237601. doi: 10.1103/PhysRevLett.117.237601. Epub 2016 Nov 30.

The complex electronic properties of ZrTe_{5} have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and...

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Manzoni G, Gragnaniello L, Autès G, et al. Evidence for a Strong Topological Insulator Phase in ZrTe_{5}. Phys Rev Lett. 2016;117(23):237601doi: 10.1103/PhysRevLett.117.237601.
Manzoni, G., Gragnaniello, L., Autès, G., Kuhn, T., Sterzi, A., Cilento, F., Zacchigna, M., Enenkel, V., Vobornik, I., Barba, L., Bisti, F., Bugnon, P., Magrez, A., Strocov, V. N., Berger, H., Yazyev, O. V., Fonin, M., Parmigiani, F., & Crepaldi, A. (2016). Evidence for a Strong Topological Insulator Phase in ZrTe_{5}. Physical review letters, 117(23), 237601. https://doi.org/10.1103/PhysRevLett.117.237601
Manzoni, G, et al. "Evidence for a Strong Topological Insulator Phase in ZrTe_{5}." Physical review letters vol. 117,23 (2016): 237601. doi: https://doi.org/10.1103/PhysRevLett.117.237601
Manzoni G, Gragnaniello L, Autès G, Kuhn T, Sterzi A, Cilento F, Zacchigna M, Enenkel V, Vobornik I, Barba L, Bisti F, Bugnon P, Magrez A, Strocov VN, Berger H, Yazyev OV, Fonin M, Parmigiani F, Crepaldi A. Evidence for a Strong Topological Insulator Phase in ZrTe_{5}. Phys Rev Lett. 2016 Dec 02;117(23):237601. doi: 10.1103/PhysRevLett.117.237601. Epub 2016 Nov 30. PMID: 27982645.
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Defect induced, layer-modulated magnetism in ultrathin metallic PtSe.

Nature nanotechnology

Avsar A, Ciarrocchi A, Pizzochero M, Unuchek D, Yazyev OV, Kis A.
PMID: 31209281
Nat Nanotechnol. 2019 Jul;14(7):674-678. doi: 10.1038/s41565-019-0467-1. Epub 2019 Jun 17.

Defects are ubiquitous in solids and often introduce new properties that are absent in pristine materials. One of the opportunities offered by these crystal imperfections is an extrinsically induced long-range magnetic ordering

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Avsar A, Ciarrocchi A, Pizzochero M, et al. Defect induced, layer-modulated magnetism in ultrathin metallic PtSe. Nat Nanotechnol. 2019;14(7):674-678doi: 10.1038/s41565-019-0467-1.
Avsar, A., Ciarrocchi, A., Pizzochero, M., Unuchek, D., Yazyev, O. V., & Kis, A. (2019). Defect induced, layer-modulated magnetism in ultrathin metallic PtSe. Nature nanotechnology, 14(7), 674-678. https://doi.org/10.1038/s41565-019-0467-1
Avsar, Ahmet, et al. "Defect induced, layer-modulated magnetism in ultrathin metallic PtSe." Nature nanotechnology vol. 14,7 (2019): 674-678. doi: https://doi.org/10.1038/s41565-019-0467-1
Avsar A, Ciarrocchi A, Pizzochero M, Unuchek D, Yazyev OV, Kis A. Defect induced, layer-modulated magnetism in ultrathin metallic PtSe. Nat Nanotechnol. 2019 Jul;14(7):674-678. doi: 10.1038/s41565-019-0467-1. Epub 2019 Jun 17. PMID: 31209281; PMCID: PMC6774792.
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Exchange Interactions Mediated by Nonmagnetic Cations in Double Perovskites.

Physical review letters

Katukuri VM, Babkevich P, Mustonen O, Walker HC, Fåk B, Vasala S, Karppinen M, Rønnow HM, Yazyev OV.
PMID: 32142335
Phys Rev Lett. 2020 Feb 21;124(7):077202. doi: 10.1103/PhysRevLett.124.077202.

Establishing the physical mechanism governing exchange interactions is fundamental for exploring exotic phases such as quantum spin liquids in real materials. In this Letter, we address exchange interactions in Sr_{2}CuTe_{x}W_{1-x}O_{6}, a series of double perovskites that realize a spin-1/2...

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Katukuri VM, Babkevich P, Mustonen O, et al. Exchange Interactions Mediated by Nonmagnetic Cations in Double Perovskites. Phys Rev Lett. 2020;124(7):077202doi: 10.1103/PhysRevLett.124.077202.
Katukuri, V. M., Babkevich, P., Mustonen, O., Walker, H. C., Fåk, B., Vasala, S., Karppinen, M., Rønnow, H. M., & Yazyev, O. V. (2020). Exchange Interactions Mediated by Nonmagnetic Cations in Double Perovskites. Physical review letters, 124(7), 077202. https://doi.org/10.1103/PhysRevLett.124.077202
Katukuri, Vamshi M, et al. "Exchange Interactions Mediated by Nonmagnetic Cations in Double Perovskites." Physical review letters vol. 124,7 (2020): 077202. doi: https://doi.org/10.1103/PhysRevLett.124.077202
Katukuri VM, Babkevich P, Mustonen O, Walker HC, Fåk B, Vasala S, Karppinen M, Rønnow HM, Yazyev OV. Exchange Interactions Mediated by Nonmagnetic Cations in Double Perovskites. Phys Rev Lett. 2020 Feb 21;124(7):077202. doi: 10.1103/PhysRevLett.124.077202. PMID: 32142335.
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Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}.

Physical review letters

Yao MY, Xu N, Wu QS, Autès G, Kumar N, Strocov VN, Plumb NC, Radovic M, Yazyev OV, Felser C, Mesot J, Shi M.
PMID: 31107063
Phys Rev Lett. 2019 May 03;122(17):176402. doi: 10.1103/PhysRevLett.122.176402.

Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed...

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Yao MY, Xu N, Wu QS, et al. Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}. Phys Rev Lett. 2019;122(17):176402doi: 10.1103/PhysRevLett.122.176402.
Yao, M. Y., Xu, N., Wu, Q. S., Autès, G., Kumar, N., Strocov, V. N., Plumb, N. C., Radovic, M., Yazyev, O. V., Felser, C., Mesot, J., & Shi, M. (2019). Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}. Physical review letters, 122(17), 176402. https://doi.org/10.1103/PhysRevLett.122.176402
Yao, M-Y, et al. "Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}." Physical review letters vol. 122,17 (2019): 176402. doi: https://doi.org/10.1103/PhysRevLett.122.176402
Yao MY, Xu N, Wu QS, Autès G, Kumar N, Strocov VN, Plumb NC, Radovic M, Yazyev OV, Felser C, Mesot J, Shi M. Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}. Phys Rev Lett. 2019 May 03;122(17):176402. doi: 10.1103/PhysRevLett.122.176402. PMID: 31107063.
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Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe.

Nano letters

Pedramrazi Z, Herbig C, Pulkin A, Tang S, Phillips M, Wong D, Ryu H, Pizzochero M, Chen Y, Wang F, Mele EJ, Shen ZX, Mo SK, Yazyev OV, Crommie MF.
PMID: 31329449
Nano Lett. 2019 Aug 14;19(8):5634-5639. doi: 10.1021/acs.nanolett.9b02157. Epub 2019 Jul 29.

We report the creation and manipulation of structural phase boundaries in the single-layer quantum spin Hall insulator 1T'

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Pedramrazi Z, Herbig C, Pulkin A, et al. Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe. Nano Lett. 2019;19(8):5634-5639doi: 10.1021/acs.nanolett.9b02157.
Pedramrazi, Z., Herbig, C., Pulkin, A., Tang, S., Phillips, M., Wong, D., Ryu, H., Pizzochero, M., Chen, Y., Wang, F., Mele, E. J., Shen, Z. X., Mo, S. K., Yazyev, O. V., & Crommie, M. F. (2019). Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe. Nano letters, 19(8), 5634-5639. https://doi.org/10.1021/acs.nanolett.9b02157
Pedramrazi, Zahra, et al. "Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe." Nano letters vol. 19,8 (2019): 5634-5639. doi: https://doi.org/10.1021/acs.nanolett.9b02157
Pedramrazi Z, Herbig C, Pulkin A, Tang S, Phillips M, Wong D, Ryu H, Pizzochero M, Chen Y, Wang F, Mele EJ, Shen ZX, Mo SK, Yazyev OV, Crommie MF. Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe. Nano Lett. 2019 Aug 14;19(8):5634-5639. doi: 10.1021/acs.nanolett.9b02157. Epub 2019 Jul 29. PMID: 31329449.
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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides.

Nature communications

Barja S, Refaely-Abramson S, Schuler B, Qiu DY, Pulkin A, Wickenburg S, Ryu H, Ugeda MM, Kastl C, Chen C, Hwang C, Schwartzberg A, Aloni S, Mo SK, Frank Ogletree D, Crommie MF, Yazyev OV, Louie SG, Neaton JB, Weber-Bargioni A.
PMID: 31358753
Nat Commun. 2019 Jul 29;10(1):3382. doi: 10.1038/s41467-019-11342-2.

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, transport,...

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Barja S, Refaely-Abramson S, Schuler B, et al. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides. Nat Commun. 2019;10(1):3382doi: 10.1038/s41467-019-11342-2.
Barja, S., Refaely-Abramson, S., Schuler, B., Qiu, D. Y., Pulkin, A., Wickenburg, S., Ryu, H., Ugeda, M. M., Kastl, C., Chen, C., Hwang, C., Schwartzberg, A., Aloni, S., Mo, S. K., Frank Ogletree, D., Crommie, M. F., Yazyev, O. V., Louie, S. G., Neaton, J. B., & Weber-Bargioni, A. (2019). Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides. Nature communications, 10(1), 3382. https://doi.org/10.1038/s41467-019-11342-2
Barja, Sara, et al. "Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides." Nature communications vol. 10,1 (2019): 3382. doi: https://doi.org/10.1038/s41467-019-11342-2
Barja S, Refaely-Abramson S, Schuler B, Qiu DY, Pulkin A, Wickenburg S, Ryu H, Ugeda MM, Kastl C, Chen C, Hwang C, Schwartzberg A, Aloni S, Mo SK, Frank Ogletree D, Crommie MF, Yazyev OV, Louie SG, Neaton JB, Weber-Bargioni A. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides. Nat Commun. 2019 Jul 29;10(1):3382. doi: 10.1038/s41467-019-11342-2. PMID: 31358753; PMCID: PMC6662818.
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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe.

Nature communications

Ugeda MM, Pulkin A, Tang S, Ryu H, Wu Q, Zhang Y, Wong D, Pedramrazi Z, Martín-Recio A, Chen Y, Wang F, Shen ZX, Mo SK, Yazyev OV, Crommie MF.
PMID: 30143617
Nat Commun. 2018 Aug 24;9(1):3401. doi: 10.1038/s41467-018-05672-w.

Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase...

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Ugeda MM, Pulkin A, Tang S, et al. Observation of topologically protected states at crystalline phase boundaries in single-layer WSe. Nat Commun. 2018;9(1):3401doi: 10.1038/s41467-018-05672-w.
Ugeda, M. M., Pulkin, A., Tang, S., Ryu, H., Wu, Q., Zhang, Y., Wong, D., Pedramrazi, Z., Martín-Recio, A., Chen, Y., Wang, F., Shen, Z. X., Mo, S. K., Yazyev, O. V., & Crommie, M. F. (2018). Observation of topologically protected states at crystalline phase boundaries in single-layer WSe. Nature communications, 9(1), 3401. https://doi.org/10.1038/s41467-018-05672-w
Ugeda, Miguel M, et al. "Observation of topologically protected states at crystalline phase boundaries in single-layer WSe." Nature communications vol. 9,1 (2018): 3401. doi: https://doi.org/10.1038/s41467-018-05672-w
Ugeda MM, Pulkin A, Tang S, Ryu H, Wu Q, Zhang Y, Wong D, Pedramrazi Z, Martín-Recio A, Chen Y, Wang F, Shen ZX, Mo SK, Yazyev OV, Crommie MF. Observation of topologically protected states at crystalline phase boundaries in single-layer WSe. Nat Commun. 2018 Aug 24;9(1):3401. doi: 10.1038/s41467-018-05672-w. PMID: 30143617; PMCID: PMC6109167.
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Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces.

Physical review letters

Yazyev OV, Pasquarello A.
PMID: 16712196
Phys Rev Lett. 2006 Apr 21;96(15):157601. doi: 10.1103/PhysRevLett.96.157601. Epub 2006 Apr 19.

Using a first-principles approach, we investigate the origin of the fine structure in Si 2p photoelectron spectra at the Si(100)-(2 x 1) surface and at the Si(100)-SiO2 interface. Calculated and measured shifts show very good agreement for both systems....

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Yazyev OV, Pasquarello A. Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces. Phys Rev Lett. 2006;96(15):157601doi: 10.1103/PhysRevLett.96.157601.
Yazyev, O. V., & Pasquarello, A. (2006). Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces. Physical review letters, 96(15), 157601. https://doi.org/10.1103/PhysRevLett.96.157601
Yazyev, Oleg V, and Pasquarello, Alfredo. "Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces." Physical review letters vol. 96,15 (2006): 157601. doi: https://doi.org/10.1103/PhysRevLett.96.157601
Yazyev OV, Pasquarello A. Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces. Phys Rev Lett. 2006 Apr 21;96(15):157601. doi: 10.1103/PhysRevLett.96.157601. Epub 2006 Apr 19. PMID: 16712196.
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Showing 1 to 12 of 57 entries